Abstract
Complementary organic inverters were fabricated by inkjet patterning of both the metal contacts and the semiconductors. Bottom-gate, bottom-contact organic thin-film transistors with Ta2 O5 -polymer bilayer dielectrics, inkjet-printed silver electrodes, and inkjet-printed organic semiconductors exhibit hole and electron mobilities as high as ∼ 10-2 cm2 /V s. Complementary inverters based on these transistors operate in ambient and exhibit a gain of -4.4 with supply voltage VDD =+20 V and -3 dB cutoff at 100 kHz with a load of 0.02 pF. The electrical stability of the inverters was evaluated for analog and digital operation, and a noise margin 1.1 V at VDD =+15 V was measured with bias-stress effects included.
Original language | English (US) |
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Article number | 233307 |
Journal | Applied Physics Letters |
Volume | 94 |
Issue number | 23 |
DOIs | |
State | Published - 2009 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)