Electrical stability of inkjet-patterned organic complementary inverters measured in ambient conditions

Tse Nga Ng, Sanjiv Sambandan, Rene Lujan, Ana Claudia Arias, Christopher R. Newman, He Yan, Antonio Facchetti

Research output: Contribution to journalArticlepeer-review

77 Scopus citations

Abstract

Complementary organic inverters were fabricated by inkjet patterning of both the metal contacts and the semiconductors. Bottom-gate, bottom-contact organic thin-film transistors with Ta2 O5 -polymer bilayer dielectrics, inkjet-printed silver electrodes, and inkjet-printed organic semiconductors exhibit hole and electron mobilities as high as ∼ 10-2 cm2 /V s. Complementary inverters based on these transistors operate in ambient and exhibit a gain of -4.4 with supply voltage VDD =+20 V and -3 dB cutoff at 100 kHz with a load of 0.02 pF. The electrical stability of the inverters was evaluated for analog and digital operation, and a noise margin 1.1 V at VDD =+15 V was measured with bias-stress effects included.

Original languageEnglish (US)
Article number233307
JournalApplied Physics Letters
Volume94
Issue number23
DOIs
StatePublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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