Electrical-transport, magneto-transport and magnetic anisotropy of epitaxially grown MnAs/GaAs hybrid multilayers

J. H. Song; J. J. Lee; Y. Cui; J. B. Ketterson; Sunglae Cho

doi:10.1016/j.jmmm.2004.09.033

Electrical-transport, magneto-transport and magnetic anisotropy of epitaxially grown MnAs/GaAs hybrid multilayers

J. H. Song, J. J. Lee, Y. Cui, J. B. Ketterson, Sunglae Cho

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We successfully fabricated epitaxial MnAs/GaAs multilayers with a total thickness of 300 nm using molecular beam epitaxy. The periodicity of the samples was varied from 0.5 to 10 nm. All samples exhibited ferromagnetism above room temperature and show semiconductor-like behavior in the temperature range studied. Anisotropy of the magnetic, electrical, and magneto-transport properties was observed for the samples exhibiting a two-fold symmetric crystal structure on sample surface whereas no anisotropy was exhibited for the samples with four-fold symmetry. These results indicate that such anisotropies originate from the structural anisotropy.

Original language	English (US)
Pages (from-to)	41-45
Number of pages	5
Journal	Journal of Magnetism and Magnetic Materials
Volume	286
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jmmm.2004.09.033
State	Published - Feb 2005

Keywords

Ferromagnetic semiconductor
Hybrid multilayer
Spintronics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2004.09.033

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title = "Electrical-transport, magneto-transport and magnetic anisotropy of epitaxially grown MnAs/GaAs hybrid multilayers",

abstract = "We successfully fabricated epitaxial MnAs/GaAs multilayers with a total thickness of 300 nm using molecular beam epitaxy. The periodicity of the samples was varied from 0.5 to 10 nm. All samples exhibited ferromagnetism above room temperature and show semiconductor-like behavior in the temperature range studied. Anisotropy of the magnetic, electrical, and magneto-transport properties was observed for the samples exhibiting a two-fold symmetric crystal structure on sample surface whereas no anisotropy was exhibited for the samples with four-fold symmetry. These results indicate that such anisotropies originate from the structural anisotropy.",

keywords = "Ferromagnetic semiconductor, Hybrid multilayer, Spintronics",

author = "Song, {J. H.} and Lee, {J. J.} and Y. Cui and Ketterson, {J. B.} and Sunglae Cho",

note = "Funding Information: Research at Northwestern University was supported by the AFOSR Chalcopyrite MURI Grant # F49620-01-1-0428, DARPA Grant # N00014-02-1-0887, and NSF Grant # ECS-0224210; use was made of the facilities operated by the Northwestern MERSEC supported by the National Science Foundation. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

year = "2005",

month = feb,

doi = "10.1016/j.jmmm.2004.09.033",

language = "English (US)",

volume = "286",

pages = "41--45",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "SPEC. ISS.",

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TY - JOUR

T1 - Electrical-transport, magneto-transport and magnetic anisotropy of epitaxially grown MnAs/GaAs hybrid multilayers

AU - Song, J. H.

AU - Lee, J. J.

AU - Cui, Y.

AU - Ketterson, J. B.

AU - Cho, Sunglae

N1 - Funding Information: Research at Northwestern University was supported by the AFOSR Chalcopyrite MURI Grant # F49620-01-1-0428, DARPA Grant # N00014-02-1-0887, and NSF Grant # ECS-0224210; use was made of the facilities operated by the Northwestern MERSEC supported by the National Science Foundation. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2005/2

Y1 - 2005/2

N2 - We successfully fabricated epitaxial MnAs/GaAs multilayers with a total thickness of 300 nm using molecular beam epitaxy. The periodicity of the samples was varied from 0.5 to 10 nm. All samples exhibited ferromagnetism above room temperature and show semiconductor-like behavior in the temperature range studied. Anisotropy of the magnetic, electrical, and magneto-transport properties was observed for the samples exhibiting a two-fold symmetric crystal structure on sample surface whereas no anisotropy was exhibited for the samples with four-fold symmetry. These results indicate that such anisotropies originate from the structural anisotropy.

AB - We successfully fabricated epitaxial MnAs/GaAs multilayers with a total thickness of 300 nm using molecular beam epitaxy. The periodicity of the samples was varied from 0.5 to 10 nm. All samples exhibited ferromagnetism above room temperature and show semiconductor-like behavior in the temperature range studied. Anisotropy of the magnetic, electrical, and magneto-transport properties was observed for the samples exhibiting a two-fold symmetric crystal structure on sample surface whereas no anisotropy was exhibited for the samples with four-fold symmetry. These results indicate that such anisotropies originate from the structural anisotropy.

KW - Ferromagnetic semiconductor

KW - Hybrid multilayer

KW - Spintronics

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U2 - 10.1016/j.jmmm.2004.09.033

DO - 10.1016/j.jmmm.2004.09.033

M3 - Article

AN - SCOPUS:11444256583

SN - 0304-8853

VL - 286

SP - 41

EP - 45

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - SPEC. ISS.

ER -

Electrical-transport, magneto-transport and magnetic anisotropy of epitaxially grown MnAs/GaAs hybrid multilayers

Abstract

Keywords

ASJC Scopus subject areas

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