Abstract
We successfully fabricated epitaxial MnAs/GaAs multilayers with a total thickness of 300 nm using molecular beam epitaxy. The periodicity of the samples was varied from 0.5 to 10 nm. All samples exhibited ferromagnetism above room temperature and show semiconductor-like behavior in the temperature range studied. Anisotropy of the magnetic, electrical, and magneto-transport properties was observed for the samples exhibiting a two-fold symmetric crystal structure on sample surface whereas no anisotropy was exhibited for the samples with four-fold symmetry. These results indicate that such anisotropies originate from the structural anisotropy.
Original language | English (US) |
---|---|
Pages (from-to) | 41-45 |
Number of pages | 5 |
Journal | Journal of Magnetism and Magnetic Materials |
Volume | 286 |
Issue number | SPEC. ISS. |
DOIs | |
State | Published - Feb 2005 |
Funding
Research at Northwestern University was supported by the AFOSR Chalcopyrite MURI Grant # F49620-01-1-0428, DARPA Grant # N00014-02-1-0887, and NSF Grant # ECS-0224210; use was made of the facilities operated by the Northwestern MERSEC supported by the National Science Foundation.
Keywords
- Ferromagnetic semiconductor
- Hybrid multilayer
- Spintronics
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics