Electrical transport properties of highly doped N-type GaN epilayers

H. J. Lee*, M. G. Cheong, E. K. Suh, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

Temperature-dependent Hall-effects in MOCVD-grown Si-doped GaN epilayers were measured as a function of temperature in the range 10-800 K. The results were satisfactorily analyzed in terms of a two-band model including the F and impurity bands at lower temperatures than room. The F band electrons are dominant only high temperatures. The ionized impurity scattering is the most important in the F band except at very high temperatures.

Original languageEnglish (US)
Pages (from-to)321-326
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3287
DOIs
StatePublished - Dec 1 1998
EventPhotodetectors: Materials and Devices III - San Jose, CA, United States
Duration: Jan 28 1998Jan 30 1998

Keywords

  • Electron transport
  • Gallium nitride
  • Impurity band
  • Scattering mechanisms
  • Two-band model

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Electrical transport properties of highly doped N-type GaN epilayers'. Together they form a unique fingerprint.

Cite this