Electrically controlled hybrid superconductor-ferromagnet cell for high density cryogenic memory

I. P. Nevirkovets; O. A. Mukhanov

doi:10.1063/5.0165128

Electrically controlled hybrid superconductor-ferromagnet cell for high density cryogenic memory

I. P. Nevirkovets, O. A. Mukhanov^*

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We report the fabrication and testing, at 4.2 K, of an S₁IS₂FS₃ device, where S, F, and I denote a superconductor (Nb), a ferromagnetic material (Permalloy), and an insulator (AlO_x), respectively. The F layer covers about one half of the top electrode of the S₁IS₂ Josephson junction and is positioned off-center. Electric current, I_tr, along the S₃ electrode can change the magnetization of the F layer in such a way that, for one direction of I_tr, a magnetic flux penetrates the junction perpendicular to the layers, whereas for the opposite direction, the perpendicular magnetic flux can be removed. In the former state, the modulation pattern of the Josephson critical current, I_c, in the magnetic field, H, may acquire minimum near H = 0 and restores its usual shape with maximum in the second state. These states can be used for building a compact cryogenic memory compatible with single flux quantum electronics.

Original language	English (US)
Article number	072601
Journal	Applied Physics Letters
Volume	123
Issue number	7
DOIs	https://doi.org/10.1063/5.0165128
State	Published - Aug 14 2023

Funding

This research received the support from NSF Grant No. DMR 1905742 and from the NSF DISCoVER Expedition award under Grant No. CCF-2124453. I.P.N. acknowledges the use of facilities of the Materials Research Center at Northwestern University, supervised by J. B. Ketterson and supported by NSF.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/5.0165128

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@article{6853833546224efba6edb47b721fab04,

title = "Electrically controlled hybrid superconductor-ferromagnet cell for high density cryogenic memory",

abstract = "We report the fabrication and testing, at 4.2 K, of an S1IS2FS3 device, where S, F, and I denote a superconductor (Nb), a ferromagnetic material (Permalloy), and an insulator (AlOx), respectively. The F layer covers about one half of the top electrode of the S1IS2 Josephson junction and is positioned off-center. Electric current, Itr, along the S3 electrode can change the magnetization of the F layer in such a way that, for one direction of Itr, a magnetic flux penetrates the junction perpendicular to the layers, whereas for the opposite direction, the perpendicular magnetic flux can be removed. In the former state, the modulation pattern of the Josephson critical current, Ic, in the magnetic field, H, may acquire minimum near H = 0 and restores its usual shape with maximum in the second state. These states can be used for building a compact cryogenic memory compatible with single flux quantum electronics.",

author = "Nevirkovets, \{I. P.\} and Mukhanov, \{O. A.\}",

note = "Publisher Copyright: {\textcopyright} 2023 Author(s).",

year = "2023",

month = aug,

day = "14",

doi = "10.1063/5.0165128",

language = "English (US)",

volume = "123",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Electrically controlled hybrid superconductor-ferromagnet cell for high density cryogenic memory

AU - Nevirkovets, I. P.

AU - Mukhanov, O. A.

PY - 2023/8/14

Y1 - 2023/8/14

N2 - We report the fabrication and testing, at 4.2 K, of an S1IS2FS3 device, where S, F, and I denote a superconductor (Nb), a ferromagnetic material (Permalloy), and an insulator (AlOx), respectively. The F layer covers about one half of the top electrode of the S1IS2 Josephson junction and is positioned off-center. Electric current, Itr, along the S3 electrode can change the magnetization of the F layer in such a way that, for one direction of Itr, a magnetic flux penetrates the junction perpendicular to the layers, whereas for the opposite direction, the perpendicular magnetic flux can be removed. In the former state, the modulation pattern of the Josephson critical current, Ic, in the magnetic field, H, may acquire minimum near H = 0 and restores its usual shape with maximum in the second state. These states can be used for building a compact cryogenic memory compatible with single flux quantum electronics.

AB - We report the fabrication and testing, at 4.2 K, of an S1IS2FS3 device, where S, F, and I denote a superconductor (Nb), a ferromagnetic material (Permalloy), and an insulator (AlOx), respectively. The F layer covers about one half of the top electrode of the S1IS2 Josephson junction and is positioned off-center. Electric current, Itr, along the S3 electrode can change the magnetization of the F layer in such a way that, for one direction of Itr, a magnetic flux penetrates the junction perpendicular to the layers, whereas for the opposite direction, the perpendicular magnetic flux can be removed. In the former state, the modulation pattern of the Josephson critical current, Ic, in the magnetic field, H, may acquire minimum near H = 0 and restores its usual shape with maximum in the second state. These states can be used for building a compact cryogenic memory compatible with single flux quantum electronics.

UR - http://www.scopus.com/inward/record.url?scp=85168621305&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85168621305&partnerID=8YFLogxK

U2 - 10.1063/5.0165128

DO - 10.1063/5.0165128

M3 - Article

AN - SCOPUS:85168621305

SN - 0003-6951

VL - 123

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 072601

ER -

Electrically controlled hybrid superconductor-ferromagnet cell for high density cryogenic memory

Abstract

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