Electrically isolated SiGe quantum dots

Emma Tevaarwerk; P. Rugheimer; O. M. Castellini; D. G. Keppel; S. T. Utley; D. E. Savage; M. G. Lagally; M. A. Eriksson

doi:10.1063/1.1484251

Electrically isolated SiGe quantum dots

Emma Tevaarwerk^*, P. Rugheimer, O. M. Castellini, D. G. Keppel, S. T. Utley, D. E. Savage, M. G. Lagally, M. A. Eriksson

^*Corresponding author for this work

McCormick Office of Undergraduate Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A variation of electric force microscopy (EFM) is used to measure the electrical isolation of SiGe quantum dots (QDs). The SiGe QDs are grown on mesas of ultrathin silicon on insulator. Near the mesa edges, the thin silicon layer has been incorporated into the QDs, resulting in electrically isolated QDs. Away from the edges, the silicon layer is not incorporated and has a two-dimensional resistivity of less than 800 T per sq, resulting in relatively short RC times for charge flow on the mesa. The EFM technique we use here is a powerful probe of samples and devices with floating-gate geometries.

Original language	English (US)
Pages (from-to)	4626-4628
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	24
DOIs	https://doi.org/10.1063/1.1484251
State	Published - Jun 17 2002

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Electrically isolated SiGe quantum dots",

abstract = "A variation of electric force microscopy (EFM) is used to measure the electrical isolation of SiGe quantum dots (QDs). The SiGe QDs are grown on mesas of ultrathin silicon on insulator. Near the mesa edges, the thin silicon layer has been incorporated into the QDs, resulting in electrically isolated QDs. Away from the edges, the silicon layer is not incorporated and has a two-dimensional resistivity of less than 800 T per sq, resulting in relatively short RC times for charge flow on the mesa. The EFM technique we use here is a powerful probe of samples and devices with floating-gate geometries.",

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AU - Tevaarwerk, Emma

AU - Rugheimer, P.

AU - Castellini, O. M.

AU - Keppel, D. G.

AU - Utley, S. T.

AU - Savage, D. E.

AU - Lagally, M. G.

AU - Eriksson, M. A.

PY - 2002/6/17

Y1 - 2002/6/17

N2 - A variation of electric force microscopy (EFM) is used to measure the electrical isolation of SiGe quantum dots (QDs). The SiGe QDs are grown on mesas of ultrathin silicon on insulator. Near the mesa edges, the thin silicon layer has been incorporated into the QDs, resulting in electrically isolated QDs. Away from the edges, the silicon layer is not incorporated and has a two-dimensional resistivity of less than 800 T per sq, resulting in relatively short RC times for charge flow on the mesa. The EFM technique we use here is a powerful probe of samples and devices with floating-gate geometries.

AB - A variation of electric force microscopy (EFM) is used to measure the electrical isolation of SiGe quantum dots (QDs). The SiGe QDs are grown on mesas of ultrathin silicon on insulator. Near the mesa edges, the thin silicon layer has been incorporated into the QDs, resulting in electrically isolated QDs. Away from the edges, the silicon layer is not incorporated and has a two-dimensional resistivity of less than 800 T per sq, resulting in relatively short RC times for charge flow on the mesa. The EFM technique we use here is a powerful probe of samples and devices with floating-gate geometries.

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Electrically isolated SiGe quantum dots

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