Electrically pumped heterogeneously integrated Si/III-V evanescent lasers with micro-loop mirror reflector

Yunan Zheng; Doris Keh-Ting Ng; Yongqiang Wei; Wang Yadong; Yingyan Huang; Yongming Tu; Chee Wei Lee; Boyang Liu; Seng Tiong Ho

doi:10.1063/1.3607309

Electrically pumped heterogeneously integrated Si/III-V evanescent lasers with micro-loop mirror reflector

Yunan Zheng^*, Doris Keh-Ting Ng, Yongqiang Wei, Wang Yadong, Yingyan Huang, Yongming Tu, Chee Wei Lee, Boyang Liu, Seng Tiong Ho

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

An electrically pumped heterogeneously integrated Si/AlGaInAs evanescent laser with micro-loop mirror (MLM) as high reflectors at both ends is experimentally demonstrated. Finite-difference time-domain simulation shows that 98 reflectivity can be achieved with micro-loop mirror formed by single-mode silicon-on-insulator (SOI) waveguides. The laser based on a Si/III-V hybrid gain waveguide and passive SOI MLM reflectors is fabricated and single-mode continuous-wave (CW) lasing is achieved at room temperature with a lasing threshold current density of 2.5 kA/cm².

Original language	English (US)
Article number	011103
Journal	Applied Physics Letters
Volume	99
Issue number	1
DOIs	https://doi.org/10.1063/1.3607309
State	Published - Jul 4 2011

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Electrically pumped heterogeneously integrated Si/III-V evanescent lasers with micro-loop mirror reflector",

abstract = "An electrically pumped heterogeneously integrated Si/AlGaInAs evanescent laser with micro-loop mirror (MLM) as high reflectors at both ends is experimentally demonstrated. Finite-difference time-domain simulation shows that 98 reflectivity can be achieved with micro-loop mirror formed by single-mode silicon-on-insulator (SOI) waveguides. The laser based on a Si/III-V hybrid gain waveguide and passive SOI MLM reflectors is fabricated and single-mode continuous-wave (CW) lasing is achieved at room temperature with a lasing threshold current density of 2.5 kA/cm2.",

author = "Yunan Zheng and {Keh-Ting Ng}, Doris and Yongqiang Wei and Wang Yadong and Yingyan Huang and Yongming Tu and Lee, {Chee Wei} and Boyang Liu and Ho, {Seng Tiong}",

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language = "English (US)",

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T1 - Electrically pumped heterogeneously integrated Si/III-V evanescent lasers with micro-loop mirror reflector

AU - Zheng, Yunan

AU - Keh-Ting Ng, Doris

AU - Wei, Yongqiang

AU - Yadong, Wang

AU - Huang, Yingyan

AU - Tu, Yongming

AU - Lee, Chee Wei

AU - Liu, Boyang

AU - Ho, Seng Tiong

PY - 2011/7/4

Y1 - 2011/7/4

N2 - An electrically pumped heterogeneously integrated Si/AlGaInAs evanescent laser with micro-loop mirror (MLM) as high reflectors at both ends is experimentally demonstrated. Finite-difference time-domain simulation shows that 98 reflectivity can be achieved with micro-loop mirror formed by single-mode silicon-on-insulator (SOI) waveguides. The laser based on a Si/III-V hybrid gain waveguide and passive SOI MLM reflectors is fabricated and single-mode continuous-wave (CW) lasing is achieved at room temperature with a lasing threshold current density of 2.5 kA/cm2.

AB - An electrically pumped heterogeneously integrated Si/AlGaInAs evanescent laser with micro-loop mirror (MLM) as high reflectors at both ends is experimentally demonstrated. Finite-difference time-domain simulation shows that 98 reflectivity can be achieved with micro-loop mirror formed by single-mode silicon-on-insulator (SOI) waveguides. The laser based on a Si/III-V hybrid gain waveguide and passive SOI MLM reflectors is fabricated and single-mode continuous-wave (CW) lasing is achieved at room temperature with a lasing threshold current density of 2.5 kA/cm2.

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Electrically pumped heterogeneously integrated Si/III-V evanescent lasers with micro-loop mirror reflector

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