Losses as low as 0.4 ± 0.2dB/cm and electro-optical modulation efficiencies as high as 5°/V/mm have been obtained in single mode waveguides employing a novel buried structure in GalnAsP/lnP grown by LPMOCVD and processed by selective chemical etching. Such modulators are potentially excellent candidates for integrated optoelectronics.
- Integrated optics
- Waveguide components
ASJC Scopus subject areas
- Electrical and Electronic Engineering