Electro-optical modulators using novel buried waveguides in GaInAsP/InP material

Y. Bourbin; A. Enard; R. Blondeau; M. Razeghi; D. Rondi; M. Papuchon; B. DeCremoux

doi:10.1049/el:19880148

Electro-optical modulators using novel buried waveguides in GaInAsP/InP material

Y. Bourbin, A. Enard, R. Blondeau, M. Razeghi, D. Rondi, M. Papuchon, B. DeCremoux

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Losses as low as 0.4 ± 0.2dB/cm and electro-optical modulation efficiencies as high as 5°/V/mm have been obtained in single mode waveguides employing a novel buried structure in GalnAsP/lnP grown by LPMOCVD and processed by selective chemical etching. Such modulators are potentially excellent candidates for integrated optoelectronics.

Original language	English (US)
Pages (from-to)	221-223
Number of pages	3
Journal	Electronics Letters
Volume	24
Issue number	4
DOIs	https://doi.org/10.1049/el:19880148
State	Published - Jan 1 1988

Keywords

Integrated optics
Modulators
Waveguide components

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19880148

Cite this

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title = "Electro-optical modulators using novel buried waveguides in GaInAsP/InP material",

abstract = "Losses as low as 0.4 ± 0.2dB/cm and electro-optical modulation efficiencies as high as 5°/V/mm have been obtained in single mode waveguides employing a novel buried structure in GalnAsP/lnP grown by LPMOCVD and processed by selective chemical etching. Such modulators are potentially excellent candidates for integrated optoelectronics.",

keywords = "Integrated optics, Modulators, Waveguide components",

author = "Y. Bourbin and A. Enard and R. Blondeau and M. Razeghi and D. Rondi and M. Papuchon and B. DeCremoux",

year = "1988",

month = jan,

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doi = "10.1049/el:19880148",

language = "English (US)",

volume = "24",

pages = "221--223",

journal = "Electronics Letters",

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TY - JOUR

T1 - Electro-optical modulators using novel buried waveguides in GaInAsP/InP material

AU - Bourbin, Y.

AU - Enard, A.

AU - Blondeau, R.

AU - Razeghi, M.

AU - Rondi, D.

AU - Papuchon, M.

AU - DeCremoux, B.

PY - 1988/1/1

Y1 - 1988/1/1

N2 - Losses as low as 0.4 ± 0.2dB/cm and electro-optical modulation efficiencies as high as 5°/V/mm have been obtained in single mode waveguides employing a novel buried structure in GalnAsP/lnP grown by LPMOCVD and processed by selective chemical etching. Such modulators are potentially excellent candidates for integrated optoelectronics.

AB - Losses as low as 0.4 ± 0.2dB/cm and electro-optical modulation efficiencies as high as 5°/V/mm have been obtained in single mode waveguides employing a novel buried structure in GalnAsP/lnP grown by LPMOCVD and processed by selective chemical etching. Such modulators are potentially excellent candidates for integrated optoelectronics.

KW - Integrated optics

KW - Modulators

KW - Waveguide components

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U2 - 10.1049/el:19880148

DO - 10.1049/el:19880148

M3 - Article

AN - SCOPUS:0023963568

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EP - 223

JO - Electronics Letters

JF - Electronics Letters

IS - 4

ER -

Electro-optical modulators using novel buried waveguides in GaInAsP/InP material

Abstract

Keywords

ASJC Scopus subject areas

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