Abstract
Losses as low as 0.4 ± 0.2dB/cm and electro-optical modulation efficiencies as high as 5°/V/mm have been obtained in single mode waveguides employing a novel buried structure in GalnAsP/lnP grown by LPMOCVD and processed by selective chemical etching. Such modulators are potentially excellent candidates for integrated optoelectronics.
Original language | English (US) |
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Pages (from-to) | 221-223 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 24 |
Issue number | 4 |
DOIs | |
State | Published - Jan 1 1988 |
Keywords
- Integrated optics
- Modulators
- Waveguide components
ASJC Scopus subject areas
- Electrical and Electronic Engineering