Electro-optical modulators using novel buried waveguides in GaInAsP/InP material

Y. Bourbin, A. Enard, R. Blondeau, M. Razeghi, D. Rondi, M. Papuchon, B. DeCremoux

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


Losses as low as 0.4 ± 0.2dB/cm and electro-optical modulation efficiencies as high as 5°/V/mm have been obtained in single mode waveguides employing a novel buried structure in GalnAsP/lnP grown by LPMOCVD and processed by selective chemical etching. Such modulators are potentially excellent candidates for integrated optoelectronics.

Original languageEnglish (US)
Pages (from-to)221-223
Number of pages3
JournalElectronics Letters
Issue number4
StatePublished - Jan 1 1988


  • Integrated optics
  • Modulators
  • Waveguide components

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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