Electrochemical studies of capacitance in cerium oxide thin films and its relationship to anionic and electronic defect densities

William C. Chueh; Sossina M. Haile

doi:10.1039/b910903j

Electrochemical studies of capacitance in cerium oxide thin films and its relationship to anionic and electronic defect densities

William C. Chueh, Sossina M. Haile

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

87 Scopus citations

Abstract

Small polaron carrier density in epitaxial, doped CeO₂ thin films under low oxygen partial pressure was determined from electrochemically- measured capacitance after accounting for interfacial effects and shown to agree well with bulk values.

Original language	English (US)
Pages (from-to)	8144-8148
Number of pages	5
Journal	Physical Chemistry Chemical Physics
Volume	11
Issue number	37
DOIs	https://doi.org/10.1039/b910903j
State	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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title = "Electrochemical studies of capacitance in cerium oxide thin films and its relationship to anionic and electronic defect densities",

abstract = "Small polaron carrier density in epitaxial, doped CeO2 thin films under low oxygen partial pressure was determined from electrochemically- measured capacitance after accounting for interfacial effects and shown to agree well with bulk values.",

author = "Chueh, {William C.} and Haile, {Sossina M.}",

year = "2009",

doi = "10.1039/b910903j",

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AU - Chueh, William C.

AU - Haile, Sossina M.

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JO - Physical Chemistry Chemical Physics

JF - Physical Chemistry Chemical Physics

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Electrochemical studies of capacitance in cerium oxide thin films and its relationship to anionic and electronic defect densities

Abstract

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