Electroluminescence at 375 nm from a ZnOGaN:Mgc-Al 2O 3 heterojunction light emitting diode

D. J. Rogers*, F. Hosseini Teherani, A. Yasan, K. Minder, P. Kung, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

183 Scopus citations

Abstract

n-ZnOp-GaN:Mg heterojunction light emitting diode (LED) mesas were fabricated on c-Al 2O 3 substrates using pulsed laser deposition for the ZnO and metal organic chemical vapor deposition for the GaN:Mg. High crystal quality and good surface morphology were confirmed by x-ray diffraction and scanning electron microscopy. Room temperature (RT) photoluminescence (PL) showed an intense main peak at 375 nm and a negligibly low green emission indicative of a near band edge excitonic emission from a ZnO layer with low dislocation/defect density. The LEDs showed I-V characteristics confirming a rectifying diode behavior and a RT electroluminescence (EL) peaked at about 375 nm. A good correlation between the wavelength maxima for the EL and PL suggests that recombination occurs in the ZnO layer and that it may be excitonic in origin. This also indicates that there is significant hole injection from the GaN:Mg into the ZnO.

Original languageEnglish (US)
Article number141918
JournalApplied Physics Letters
Volume88
Issue number14
DOIs
StatePublished - Apr 3 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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