Electroluminescence from Er-doped GaP

X. Z. Wang; B. W. Wessels

doi:10.1063/1.112985

Electroluminescence from Er-doped GaP

X. Z. Wang^*, B. W. Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The electroluminescent properties of the Er-doped GaP light-emitting diodes prepared by metalorganic vapor phase epitaxy and diffusion were investigated. Strong characteristic Er³⁺ intra-4f-shell emission at 0.80 eV is observed over the temperature range of 12-300 K. The electroluminescence intensity is only weakly temperature dependent, decreasing less than 40% as the temperature increases from 20 to 300 K.

Original language	English (US)
Pages (from-to)	584-586
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	5
DOIs	https://doi.org/10.1063/1.112985
State	Published - Dec 1 1994

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.112985

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@article{fca9f32bca3045718352047664162263,

title = "Electroluminescence from Er-doped GaP",

abstract = "The electroluminescent properties of the Er-doped GaP light-emitting diodes prepared by metalorganic vapor phase epitaxy and diffusion were investigated. Strong characteristic Er3+ intra-4f-shell emission at 0.80 eV is observed over the temperature range of 12-300 K. The electroluminescence intensity is only weakly temperature dependent, decreasing less than 40% as the temperature increases from 20 to 300 K.",

author = "Wang, {X. Z.} and Wessels, {B. W.}",

year = "1994",

month = dec,

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doi = "10.1063/1.112985",

language = "English (US)",

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pages = "584--586",

journal = "Applied Physics Letters",

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T1 - Electroluminescence from Er-doped GaP

AU - Wang, X. Z.

AU - Wessels, B. W.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - The electroluminescent properties of the Er-doped GaP light-emitting diodes prepared by metalorganic vapor phase epitaxy and diffusion were investigated. Strong characteristic Er3+ intra-4f-shell emission at 0.80 eV is observed over the temperature range of 12-300 K. The electroluminescence intensity is only weakly temperature dependent, decreasing less than 40% as the temperature increases from 20 to 300 K.

AB - The electroluminescent properties of the Er-doped GaP light-emitting diodes prepared by metalorganic vapor phase epitaxy and diffusion were investigated. Strong characteristic Er3+ intra-4f-shell emission at 0.80 eV is observed over the temperature range of 12-300 K. The electroluminescence intensity is only weakly temperature dependent, decreasing less than 40% as the temperature increases from 20 to 300 K.

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U2 - 10.1063/1.112985

DO - 10.1063/1.112985

M3 - Article

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EP - 586

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

ER -

Electroluminescence from Er-doped GaP

Abstract

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