Electroluminescence from Er-doped GaP

X. Z. Wang*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

The electroluminescent properties of the Er-doped GaP light-emitting diodes prepared by metalorganic vapor phase epitaxy and diffusion were investigated. Strong characteristic Er3+ intra-4f-shell emission at 0.80 eV is observed over the temperature range of 12-300 K. The electroluminescence intensity is only weakly temperature dependent, decreasing less than 40% as the temperature increases from 20 to 300 K.

Original languageEnglish (US)
Pages (from-to)584-586
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number5
DOIs
StatePublished - Dec 1 1994

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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