Abstract
The electroluminescent properties of the Er-doped GaP light-emitting diodes prepared by metalorganic vapor phase epitaxy and diffusion were investigated. Strong characteristic Er3+ intra-4f-shell emission at 0.80 eV is observed over the temperature range of 12-300 K. The electroluminescence intensity is only weakly temperature dependent, decreasing less than 40% as the temperature increases from 20 to 300 K.
Original language | English (US) |
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Pages (from-to) | 584-586 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 65 |
Issue number | 5 |
DOIs | |
State | Published - Dec 1 1994 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)