Electroluminescence from Er-doped GaP

X. Z. Wang; B. W. Wessels

doi:10.1063/1.112985

Electroluminescence from Er-doped GaP

X. Z. Wang^*, B. W. Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article

19 Scopus citations

Abstract

The electroluminescent properties of the Er-doped GaP light-emitting diodes prepared by metalorganic vapor phase epitaxy and diffusion were investigated. Strong characteristic Er³⁺ intra-4f-shell emission at 0.80 eV is observed over the temperature range of 12-300 K. The electroluminescence intensity is only weakly temperature dependent, decreasing less than 40% as the temperature increases from 20 to 300 K.

Original language	English (US)
Pages (from-to)	584-586
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	5
DOIs	https://doi.org/10.1063/1.112985
State	Published - Dec 1 1994

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Wang, X. Z., & Wessels, B. W. (1994). Electroluminescence from Er-doped GaP. Applied Physics Letters, 65(5), 584-586. https://doi.org/10.1063/1.112985

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abstract = "The electroluminescent properties of the Er-doped GaP light-emitting diodes prepared by metalorganic vapor phase epitaxy and diffusion were investigated. Strong characteristic Er3+ intra-4f-shell emission at 0.80 eV is observed over the temperature range of 12-300 K. The electroluminescence intensity is only weakly temperature dependent, decreasing less than 40% as the temperature increases from 20 to 300 K.",

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AB - The electroluminescent properties of the Er-doped GaP light-emitting diodes prepared by metalorganic vapor phase epitaxy and diffusion were investigated. Strong characteristic Er3+ intra-4f-shell emission at 0.80 eV is observed over the temperature range of 12-300 K. The electroluminescence intensity is only weakly temperature dependent, decreasing less than 40% as the temperature increases from 20 to 300 K.

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