Electroluminescence from forward-biased Er-doped GaP p-n junctions at room temperature

G. M. Ford*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The electroluminescent properties of Er-doped GaP light emitting diodes are reported. Diodes were prepared by metalorganic vapor phase epitaxy and zinc diffusion. Strong characteristic Er3+ emission at 0.80 eV (1.54 μm) under forward bias is detected at room temperature. Minimal thermal quenching of the electroluminescence was observed. The luminescence intensity depended linearly on current density for low applied current densities, and saturated at a current density of 17 A/ cm2

Original languageEnglish (US)
Pages (from-to)1126-1128
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number8
DOIs
StatePublished - Dec 1 1996

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Electroluminescence from forward-biased Er-doped GaP p-n junctions at room temperature'. Together they form a unique fingerprint.

Cite this