Electroluminescence from forward-biased Er-doped GaP p-n junctions at room temperature

G. M. Ford; B. W. Wessels

Electroluminescence from forward-biased Er-doped GaP p-n junctions at room temperature

G. M. Ford^*, B. W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The electroluminescent properties of Er-doped GaP light emitting diodes are reported. Diodes were prepared by metalorganic vapor phase epitaxy and zinc diffusion. Strong characteristic Er³⁺ emission at 0.80 eV (1.54 μm) under forward bias is detected at room temperature. Minimal thermal quenching of the electroluminescence was observed. The luminescence intensity depended linearly on current density for low applied current densities, and saturated at a current density of 17 A/ cm²

Original language	English (US)
Pages (from-to)	1126
Number of pages	1
Journal	Applied Physics Letters
State	Published - 1995

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

@article{b988ff56612c48f8b7e4e8715e0a6cf4,

title = "Electroluminescence from forward-biased Er-doped GaP p-n junctions at room temperature",

abstract = "The electroluminescent properties of Er-doped GaP light emitting diodes are reported. Diodes were prepared by metalorganic vapor phase epitaxy and zinc diffusion. Strong characteristic Er3+ emission at 0.80 eV (1.54 μm) under forward bias is detected at room temperature. Minimal thermal quenching of the electroluminescence was observed. The luminescence intensity depended linearly on current density for low applied current densities, and saturated at a current density of 17 A/ cm2",

author = "Ford, {G. M.} and Wessels, {B. W.}",

year = "1995",

language = "English (US)",

pages = "1126",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Electroluminescence from forward-biased Er-doped GaP p-n junctions at room temperature

AU - Ford, G. M.

AU - Wessels, B. W.

PY - 1995

Y1 - 1995

N2 - The electroluminescent properties of Er-doped GaP light emitting diodes are reported. Diodes were prepared by metalorganic vapor phase epitaxy and zinc diffusion. Strong characteristic Er3+ emission at 0.80 eV (1.54 μm) under forward bias is detected at room temperature. Minimal thermal quenching of the electroluminescence was observed. The luminescence intensity depended linearly on current density for low applied current densities, and saturated at a current density of 17 A/ cm2

AB - The electroluminescent properties of Er-doped GaP light emitting diodes are reported. Diodes were prepared by metalorganic vapor phase epitaxy and zinc diffusion. Strong characteristic Er3+ emission at 0.80 eV (1.54 μm) under forward bias is detected at room temperature. Minimal thermal quenching of the electroluminescence was observed. The luminescence intensity depended linearly on current density for low applied current densities, and saturated at a current density of 17 A/ cm2

UR - http://www.scopus.com/inward/record.url?scp=36449007814&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36449007814&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:36449007814

SN - 0003-6951

SP - 1126

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Electroluminescence from forward-biased Er-doped GaP p-n junctions at room temperature

Abstract

ASJC Scopus subject areas

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