Electroluminescence of III-nitride double heterostructure light emitting diodes with silicon and magnesium doped InGaN

GaN/InGaN/GaN double heterostructures were deposited by low pressure metalorganic chemical vapor deposition. Two different structures are studied: one with a silicon doped InGaN layer and the other with a magnesium doped InGaN layer. The electroluminescence spectrum is shifted to longer wavelengths in the structure with the magnesium doped InGaN layer. An additional red peak is seen in the electroluminescence spectrum of the magnesium doped structure. We believe this peak may be due to a transition metal (i.e. Cr) which absorbs in the green and emits in the red.