Electroluminescence of InAs-GaSb heterodiodes

Darin Hoffman*, Andrew Hood, Erick Michel, Frank Fuchs, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

The electroluminescence of a Type II InAs-GaSb superlattice heterodiode has been studied as a function of injection current and temperature in the spectral range between 3 and 13μm. The heterodiode comprises a Be-doped midwavelength infrared (MWIR) superlattice with an effective bandgap around 270 meV and an undoped long wavelength infrared (LWIR) superlattice with an effective bandgap of 115 meV. At high injection currents and elevated temperatures the band to band transitions of both superlattices can be observed. By increasing the temperature the intensity of the MWIR emission component shows a well defined thermally activated increase. The activation energy of the Beryllium doping was evaluated to be 28 meV.

Original languageEnglish (US)
Pages (from-to)126-130
Number of pages5
JournalIEEE Journal of Quantum Electronics
Volume42
Issue number2
DOIs
StatePublished - Feb 1 2006

Keywords

  • Electroluminescence
  • Heterodiode
  • InAs-GaSb
  • Semiconductor device radiation effects
  • Type-II superlattices

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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