Electroluminescence of InAs-GaSb heterodiodes

Darin Hoffman; Andrew Hood; Erick Michel; Frank Fuchs; Manijeh Razeghi

doi:10.1109/JQE.2005.861621

Electroluminescence of InAs-GaSb heterodiodes

Darin Hoffman^*, Andrew Hood, Erick Michel, Frank Fuchs, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The electroluminescence of a Type II InAs-GaSb superlattice heterodiode has been studied as a function of injection current and temperature in the spectral range between 3 and 13μm. The heterodiode comprises a Be-doped midwavelength infrared (MWIR) superlattice with an effective bandgap around 270 meV and an undoped long wavelength infrared (LWIR) superlattice with an effective bandgap of 115 meV. At high injection currents and elevated temperatures the band to band transitions of both superlattices can be observed. By increasing the temperature the intensity of the MWIR emission component shows a well defined thermally activated increase. The activation energy of the Beryllium doping was evaluated to be 28 meV.

Original language	English (US)
Pages (from-to)	126-130
Number of pages	5
Journal	IEEE Journal of Quantum Electronics
Volume	42
Issue number	2
DOIs	https://doi.org/10.1109/JQE.2005.861621
State	Published - Feb 2006

Keywords

Electroluminescence
Heterodiode
InAs-GaSb
Semiconductor device radiation effects
Type-II superlattices

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2005.861621

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title = "Electroluminescence of InAs-GaSb heterodiodes",

abstract = "The electroluminescence of a Type II InAs-GaSb superlattice heterodiode has been studied as a function of injection current and temperature in the spectral range between 3 and 13μm. The heterodiode comprises a Be-doped midwavelength infrared (MWIR) superlattice with an effective bandgap around 270 meV and an undoped long wavelength infrared (LWIR) superlattice with an effective bandgap of 115 meV. At high injection currents and elevated temperatures the band to band transitions of both superlattices can be observed. By increasing the temperature the intensity of the MWIR emission component shows a well defined thermally activated increase. The activation energy of the Beryllium doping was evaluated to be 28 meV.",

keywords = "Electroluminescence, Heterodiode, InAs-GaSb, Semiconductor device radiation effects, Type-II superlattices",

author = "Darin Hoffman and Andrew Hood and Erick Michel and Frank Fuchs and Manijeh Razeghi",

year = "2006",

month = feb,

doi = "10.1109/JQE.2005.861621",

language = "English (US)",

volume = "42",

pages = "126--130",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Electroluminescence of InAs-GaSb heterodiodes

AU - Hoffman, Darin

AU - Hood, Andrew

AU - Michel, Erick

AU - Fuchs, Frank

AU - Razeghi, Manijeh

PY - 2006/2

Y1 - 2006/2

N2 - The electroluminescence of a Type II InAs-GaSb superlattice heterodiode has been studied as a function of injection current and temperature in the spectral range between 3 and 13μm. The heterodiode comprises a Be-doped midwavelength infrared (MWIR) superlattice with an effective bandgap around 270 meV and an undoped long wavelength infrared (LWIR) superlattice with an effective bandgap of 115 meV. At high injection currents and elevated temperatures the band to band transitions of both superlattices can be observed. By increasing the temperature the intensity of the MWIR emission component shows a well defined thermally activated increase. The activation energy of the Beryllium doping was evaluated to be 28 meV.

AB - The electroluminescence of a Type II InAs-GaSb superlattice heterodiode has been studied as a function of injection current and temperature in the spectral range between 3 and 13μm. The heterodiode comprises a Be-doped midwavelength infrared (MWIR) superlattice with an effective bandgap around 270 meV and an undoped long wavelength infrared (LWIR) superlattice with an effective bandgap of 115 meV. At high injection currents and elevated temperatures the band to band transitions of both superlattices can be observed. By increasing the temperature the intensity of the MWIR emission component shows a well defined thermally activated increase. The activation energy of the Beryllium doping was evaluated to be 28 meV.

KW - Electroluminescence

KW - Heterodiode

KW - InAs-GaSb

KW - Semiconductor device radiation effects

KW - Type-II superlattices

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U2 - 10.1109/JQE.2005.861621

DO - 10.1109/JQE.2005.861621

M3 - Article

AN - SCOPUS:30744443276

SN - 0018-9197

VL - 42

SP - 126

EP - 130

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 2

ER -

Electroluminescence of InAs-GaSb heterodiodes

Abstract

Keywords

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