Electron and phonon transport in Co-doped FeV0.6Nb 0.4Sb half-Heusler thermoelectric materials

Chenguang Fu, Yintu Liu, Hanhui Xie, Xiaohua Liu, Xinbing Zhao, G. Jeffrey Snyder, Jian Xie, Tiejun Zhu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

40 Scopus citations

Abstract

The electron and phonon transport characteristics of n-type Fe 1-xCoxV0.6Nb0.4Sb half-Heusler thermoelectric compounds is analyzed. The acoustic phonon scattering is dominant in the carrier transport. The deformation potential of Edef = 14.1 eV and the density of state effective mass m* ≈ 2.0 me are derived under a single parabolic band assumption. The band gap is calculated to be ∼0.3 eV. Electron and phonon mean free paths are estimated based on the low and high temperature measurements. The electron mean free path is higher than the phonon one above room temperature, which is consistent with the experimental result that the electron mobility decreases more than the lattice thermal conductivity by grain refinement to enhance boundary scattering. A maximum ZT value of ∼0.33 is obtained at 650 K for x = 0.015, an increase by ∼60% compared with FeVSb. The optimal doping level is found to be ∼3.0 × 1020 cm-3 at 600 K.

Original languageEnglish (US)
Article number134905
JournalJournal of Applied Physics
Volume114
Issue number13
DOIs
StatePublished - Oct 7 2013

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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