Electron capture processes in optically excited In0.53Ga 0.47As/InP quantum wells

U. Cebulla; G. Bacher; A. Forchel; D. Schmitz; H. Jürgensen; M. Razeghi

doi:10.1063/1.101728

Electron capture processes in optically excited In_0.53Ga _0.47As/InP quantum wells

U. Cebulla^*, G. Bacher, A. Forchel, D. Schmitz, H. Jürgensen, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We have performed picosecond time-resolved measurements on In _0.53Ga_0.47As/InP quantum wells with varying barrier thicknesses using 10 ps Nd:YAG excitation. For this excitation, holes and electrons are created in the In_0.53Ga_0.47As layers. Due to momentum conservation the Nd:YAG excitation accelerates the electrons above the InP barrier where they can diffuse but cannot recombine. By examining the rise time of the quantum well emission, we can show that for samples with thick barriers, the barrier geometry largely controls the dynamic properties of the carriers after Nd:YAG excitation.

Original language	English (US)
Pages (from-to)	933-935
Number of pages	3
Journal	Applied Physics Letters
Volume	55
Issue number	10
DOIs	https://doi.org/10.1063/1.101728
State	Published - 1989

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Electron capture processes in optically excited In0.53Ga 0.47As/InP quantum wells",

abstract = "We have performed picosecond time-resolved measurements on In 0.53Ga0.47As/InP quantum wells with varying barrier thicknesses using 10 ps Nd:YAG excitation. For this excitation, holes and electrons are created in the In0.53Ga0.47As layers. Due to momentum conservation the Nd:YAG excitation accelerates the electrons above the InP barrier where they can diffuse but cannot recombine. By examining the rise time of the quantum well emission, we can show that for samples with thick barriers, the barrier geometry largely controls the dynamic properties of the carriers after Nd:YAG excitation.",

author = "U. Cebulla and G. Bacher and A. Forchel and D. Schmitz and H. J{\"u}rgensen and M. Razeghi",

year = "1989",

doi = "10.1063/1.101728",

language = "English (US)",

volume = "55",

pages = "933--935",

journal = "Applied Physics Letters",

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T1 - Electron capture processes in optically excited In0.53Ga 0.47As/InP quantum wells

AU - Cebulla, U.

AU - Bacher, G.

AU - Forchel, A.

AU - Schmitz, D.

AU - Jürgensen, H.

AU - Razeghi, M.

PY - 1989

Y1 - 1989

N2 - We have performed picosecond time-resolved measurements on In 0.53Ga0.47As/InP quantum wells with varying barrier thicknesses using 10 ps Nd:YAG excitation. For this excitation, holes and electrons are created in the In0.53Ga0.47As layers. Due to momentum conservation the Nd:YAG excitation accelerates the electrons above the InP barrier where they can diffuse but cannot recombine. By examining the rise time of the quantum well emission, we can show that for samples with thick barriers, the barrier geometry largely controls the dynamic properties of the carriers after Nd:YAG excitation.

AB - We have performed picosecond time-resolved measurements on In 0.53Ga0.47As/InP quantum wells with varying barrier thicknesses using 10 ps Nd:YAG excitation. For this excitation, holes and electrons are created in the In0.53Ga0.47As layers. Due to momentum conservation the Nd:YAG excitation accelerates the electrons above the InP barrier where they can diffuse but cannot recombine. By examining the rise time of the quantum well emission, we can show that for samples with thick barriers, the barrier geometry largely controls the dynamic properties of the carriers after Nd:YAG excitation.

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DO - 10.1063/1.101728

M3 - Article

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SP - 933

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Electron capture processes in optically excited In_0.53Ga _0.47As/InP quantum wells

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