Electron capture processes in optically excited In0.53Ga 0.47As/InP quantum wells

U. Cebulla*, G. Bacher, A. Forchel, D. Schmitz, H. Jürgensen, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

We have performed picosecond time-resolved measurements on In 0.53Ga0.47As/InP quantum wells with varying barrier thicknesses using 10 ps Nd:YAG excitation. For this excitation, holes and electrons are created in the In0.53Ga0.47As layers. Due to momentum conservation the Nd:YAG excitation accelerates the electrons above the InP barrier where they can diffuse but cannot recombine. By examining the rise time of the quantum well emission, we can show that for samples with thick barriers, the barrier geometry largely controls the dynamic properties of the carriers after Nd:YAG excitation.

Original languageEnglish (US)
Pages (from-to)933-935
Number of pages3
JournalApplied Physics Letters
Volume55
Issue number10
DOIs
StatePublished - Dec 1 1989

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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