Electron emission properties of Si field emitter arrays coated with nanocrystalline diamond from fullerene precursors

T. G. McCauley*, T. D. Corrigan, A. R. Krauss, O. Auciello, D. Zhou, D. M. Gruen, D. Temple, R. P H Chang, S. English, R. J. Nemanich

*Corresponding author for this work

Research output: Contribution to journalConference article

7 Scopus citations

Abstract

In this paper, we report on a substantial lowering of the threshold field for electron field emission from Si field emitter arrays (FEA), which have been coated with a thin layer of nanocrystalline diamond by microwave plasma-assisted chemical vapor deposition (MPCVD) from fullerene (C60) and methane (CH4) precursors. The field emission characteristics were investigated and the emission sites imaged using photoelectron emission microscopy (PEEM). Electron emission from these Si FEAs coated with nanocrystalline diamond was observed at threshold fields as low as 3 V/μm, with effective work functions as low as 0.59 eV.

Original languageEnglish (US)
Pages (from-to)227-232
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume498
StatePublished - Dec 1 1997
EventProceedings of the 1997 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 1 1997Dec 3 1997

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    McCauley, T. G., Corrigan, T. D., Krauss, A. R., Auciello, O., Zhou, D., Gruen, D. M., Temple, D., Chang, R. P. H., English, S., & Nemanich, R. J. (1997). Electron emission properties of Si field emitter arrays coated with nanocrystalline diamond from fullerene precursors. Materials Research Society Symposium - Proceedings, 498, 227-232.