Electron-energy-loss spectroscopy study of the adsorption of aluminum on the silicon (111) 7 × 7 surface

Yip Wah Chung*, Wigbert Siekhaus, Gabor Somorjai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Electron-energy-loss spectroscopy and low-energy-electron diffraction have been used to study the adsorption of aluminum on the silicon (111) 7 × 7 surface at different substrate temperatures (Ts). It is shown that aluminum deposition at a Ts of 100-200°C results in the disappearance of the electronic-surface states of the silicon (111) 7 × 7 surface. New aluminum-induced loss peaks appear at 1.9, 3.2, 4.9, and 7.1 eV. It is further demonstrated that aggregation of aluminum atoms occurs on the silicon surface after the deposition of either two monolayers of aluminum at Ts=100-200 °C or one monolayer of aluminum at Ts=600-700 °C.

Original languageEnglish (US)
Pages (from-to)959-963
Number of pages5
JournalPhysical Review B
Volume15
Issue number2
DOIs
StatePublished - Jan 1 1977

ASJC Scopus subject areas

  • Condensed Matter Physics

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