Electron microscopy study of interfacial structure and reaction of YBa2Cu3O7/Y-ZrO2 films on LaAlO3 substrates

J. Y. Dai; F. H. Kaatz; P. R. Markworth; D. B. Buchholz; X. Liu; W. A. Chiou; R. P.H. Chang

doi:10.1557/JMR.1998.0206

Electron microscopy study of interfacial structure and reaction of YBa₂Cu₃O₇/Y-ZrO₂ films on LaAlO₃ substrates

J. Y. Dai^*, F. H. Kaatz, P. R. Markworth, D. B. Buchholz, X. Liu, W. A. Chiou, R. P.H. Chang

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The detailed structure and interfacial reaction of epitaxial YBa₂Cu₃O₇/Y-ZrO₂ (YBCO/YSZ) films grown by chemical vapor deposition (CVD) on LaAlO₃ (LAO) substrates are investigated by means of high-resolution electron microscopy (HREM), analytical transmission electron microscopy, and scanning transmission electron microscopy (STEM). The epitaxial relations of YBCO/YSZ/LAO are [100]_YBCO//[110]_YSZ// [100]_LAO and (001)_YBCO//(001)_YSZ//(001)_LAO. The optimum atomic configuration at the YSZ/LAO interface, in which oxygen is the first atomic layer on LAO, is proposed by using HREM combined with image simulation based on the atomic structure models of the interface. Near the YBCO/YSZ interface, two localized interfacial reaction products are formed: (i) a Y-rich modulated ZrO₂ structure at the surface of the YSZ film, which may be caused by the diffusion of Y into the YSZ grains; (ii) an intergranular BaZrO₃ phase formed by the diffusion of Ba along the columnar grain boundaries of the YSZ film during YBCO growth.

Original language	English (US)
Pages (from-to)	1485-1491
Number of pages	7
Journal	Journal of Materials Research
Volume	13
Issue number	6
DOIs	https://doi.org/10.1557/JMR.1998.0206
State	Published - Jun 1998

Funding

We appreciate Professor T. J. Marks and John Belot for providing the precursors needed in these experiments. This research has been supported in part by the Office of Naval Research Grant No. N00014-95-1-0717 and the STCS-NSF award DMR-91-20000. The use of Materials Research Center facilities (DMR-9632472) is greatly appreciated.

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/JMR.1998.0206

Cite this

@article{703d6a902fcd4978819fb9ae74c8cb97,

title = "Electron microscopy study of interfacial structure and reaction of YBa2Cu3O7/Y-ZrO2 films on LaAlO3 substrates",

abstract = "The detailed structure and interfacial reaction of epitaxial YBa2Cu3O7/Y-ZrO2 (YBCO/YSZ) films grown by chemical vapor deposition (CVD) on LaAlO3 (LAO) substrates are investigated by means of high-resolution electron microscopy (HREM), analytical transmission electron microscopy, and scanning transmission electron microscopy (STEM). The epitaxial relations of YBCO/YSZ/LAO are [100]YBCO//[110]YSZ// [100]LAO and (001)YBCO//(001)YSZ//(001)LAO. The optimum atomic configuration at the YSZ/LAO interface, in which oxygen is the first atomic layer on LAO, is proposed by using HREM combined with image simulation based on the atomic structure models of the interface. Near the YBCO/YSZ interface, two localized interfacial reaction products are formed: (i) a Y-rich modulated ZrO2 structure at the surface of the YSZ film, which may be caused by the diffusion of Y into the YSZ grains; (ii) an intergranular BaZrO3 phase formed by the diffusion of Ba along the columnar grain boundaries of the YSZ film during YBCO growth.",

author = "Dai, {J. Y.} and Kaatz, {F. H.} and Markworth, {P. R.} and Buchholz, {D. B.} and X. Liu and Chiou, {W. A.} and Chang, {R. P.H.}",

note = "Funding Information: We appreciate Professor T. J. Marks and John Belot for providing the precursors needed in these experiments. This research has been supported in part by the Office of Naval Research Grant No. N00014-95-1-0717 and the STCS-NSF award DMR-91-20000. The use of Materials Research Center facilities (DMR-9632472) is greatly appreciated.",

year = "1998",

month = jun,

doi = "10.1557/JMR.1998.0206",

language = "English (US)",

volume = "13",

pages = "1485--1491",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Materials Research Society",

number = "6",

}

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T1 - Electron microscopy study of interfacial structure and reaction of YBa2Cu3O7/Y-ZrO2 films on LaAlO3 substrates

AU - Dai, J. Y.

AU - Kaatz, F. H.

AU - Markworth, P. R.

AU - Buchholz, D. B.

AU - Liu, X.

AU - Chiou, W. A.

AU - Chang, R. P.H.

N1 - Funding Information: We appreciate Professor T. J. Marks and John Belot for providing the precursors needed in these experiments. This research has been supported in part by the Office of Naval Research Grant No. N00014-95-1-0717 and the STCS-NSF award DMR-91-20000. The use of Materials Research Center facilities (DMR-9632472) is greatly appreciated.

PY - 1998/6

Y1 - 1998/6

N2 - The detailed structure and interfacial reaction of epitaxial YBa2Cu3O7/Y-ZrO2 (YBCO/YSZ) films grown by chemical vapor deposition (CVD) on LaAlO3 (LAO) substrates are investigated by means of high-resolution electron microscopy (HREM), analytical transmission electron microscopy, and scanning transmission electron microscopy (STEM). The epitaxial relations of YBCO/YSZ/LAO are [100]YBCO//[110]YSZ// [100]LAO and (001)YBCO//(001)YSZ//(001)LAO. The optimum atomic configuration at the YSZ/LAO interface, in which oxygen is the first atomic layer on LAO, is proposed by using HREM combined with image simulation based on the atomic structure models of the interface. Near the YBCO/YSZ interface, two localized interfacial reaction products are formed: (i) a Y-rich modulated ZrO2 structure at the surface of the YSZ film, which may be caused by the diffusion of Y into the YSZ grains; (ii) an intergranular BaZrO3 phase formed by the diffusion of Ba along the columnar grain boundaries of the YSZ film during YBCO growth.

AB - The detailed structure and interfacial reaction of epitaxial YBa2Cu3O7/Y-ZrO2 (YBCO/YSZ) films grown by chemical vapor deposition (CVD) on LaAlO3 (LAO) substrates are investigated by means of high-resolution electron microscopy (HREM), analytical transmission electron microscopy, and scanning transmission electron microscopy (STEM). The epitaxial relations of YBCO/YSZ/LAO are [100]YBCO//[110]YSZ// [100]LAO and (001)YBCO//(001)YSZ//(001)LAO. The optimum atomic configuration at the YSZ/LAO interface, in which oxygen is the first atomic layer on LAO, is proposed by using HREM combined with image simulation based on the atomic structure models of the interface. Near the YBCO/YSZ interface, two localized interfacial reaction products are formed: (i) a Y-rich modulated ZrO2 structure at the surface of the YSZ film, which may be caused by the diffusion of Y into the YSZ grains; (ii) an intergranular BaZrO3 phase formed by the diffusion of Ba along the columnar grain boundaries of the YSZ film during YBCO growth.

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