The Hall mobility and carrier concentration have been measured on low-resistivity ZnSe epitaxial films in the temperature range of 77-300 K. Both undoped and indium doped materials were studied. Resistivities of the as-grown films varied from 10-1 to 105 Ω cm. Electron mobility was of the order of 10-200 cm2 V-1 s-1 and was limited by ionized-impurity scattering. Analysis of the temperature dependence of the carrier concentration and Hall mobility indicated that the n-type films were heavily compensated having acceptor concentrations N A≳1018 cm-3. It was found that the acceptor and donor concentrations were essentially independent of Zn/Se pressure ratio present during growth.
ASJC Scopus subject areas
- Physics and Astronomy(all)