Electron mobility and carrier concentration of heteroepitaxial zinc selenide

W. B. Leigh*, P. Besomi, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

The Hall mobility and carrier concentration have been measured on low-resistivity ZnSe epitaxial films in the temperature range of 77-300 K. Both undoped and indium doped materials were studied. Resistivities of the as-grown films varied from 10-1 to 105 Ω cm. Electron mobility was of the order of 10-200 cm2 V-1 s-1 and was limited by ionized-impurity scattering. Analysis of the temperature dependence of the carrier concentration and Hall mobility indicated that the n-type films were heavily compensated having acceptor concentrations N A≳1018 cm-3. It was found that the acceptor and donor concentrations were essentially independent of Zn/Se pressure ratio present during growth.

Original languageEnglish (US)
Pages (from-to)532-535
Number of pages4
JournalJournal of Applied Physics
Volume53
Issue number1
DOIs
StatePublished - Dec 1 1982

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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