Electron mobility and carrier concentration of heteroepitaxial zinc selenide

W. B. Leigh; P. Besomi; B. W. Wessels

doi:10.1063/1.329959

Electron mobility and carrier concentration of heteroepitaxial zinc selenide

W. B. Leigh^*, P. Besomi, B. W. Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The Hall mobility and carrier concentration have been measured on low-resistivity ZnSe epitaxial films in the temperature range of 77-300 K. Both undoped and indium doped materials were studied. Resistivities of the as-grown films varied from 10^-1 to 10⁵ Ω cm. Electron mobility was of the order of 10-200 cm² V^-1 s^-1 and was limited by ionized-impurity scattering. Analysis of the temperature dependence of the carrier concentration and Hall mobility indicated that the n-type films were heavily compensated having acceptor concentrations N _A≳10¹⁸ cm^-3. It was found that the acceptor and donor concentrations were essentially independent of Zn/Se pressure ratio present during growth.

Original language	English (US)
Pages (from-to)	532-535
Number of pages	4
Journal	Journal of Applied Physics
Volume	53
Issue number	1
DOIs	https://doi.org/10.1063/1.329959
State	Published - Dec 1 1982

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "The Hall mobility and carrier concentration have been measured on low-resistivity ZnSe epitaxial films in the temperature range of 77-300 K. Both undoped and indium doped materials were studied. Resistivities of the as-grown films varied from 10-1 to 105 Ω cm. Electron mobility was of the order of 10-200 cm2 V-1 s-1 and was limited by ionized-impurity scattering. Analysis of the temperature dependence of the carrier concentration and Hall mobility indicated that the n-type films were heavily compensated having acceptor concentrations N A≳1018 cm-3. It was found that the acceptor and donor concentrations were essentially independent of Zn/Se pressure ratio present during growth.",

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N2 - The Hall mobility and carrier concentration have been measured on low-resistivity ZnSe epitaxial films in the temperature range of 77-300 K. Both undoped and indium doped materials were studied. Resistivities of the as-grown films varied from 10-1 to 105 Ω cm. Electron mobility was of the order of 10-200 cm2 V-1 s-1 and was limited by ionized-impurity scattering. Analysis of the temperature dependence of the carrier concentration and Hall mobility indicated that the n-type films were heavily compensated having acceptor concentrations N A≳1018 cm-3. It was found that the acceptor and donor concentrations were essentially independent of Zn/Se pressure ratio present during growth.

AB - The Hall mobility and carrier concentration have been measured on low-resistivity ZnSe epitaxial films in the temperature range of 77-300 K. Both undoped and indium doped materials were studied. Resistivities of the as-grown films varied from 10-1 to 105 Ω cm. Electron mobility was of the order of 10-200 cm2 V-1 s-1 and was limited by ionized-impurity scattering. Analysis of the temperature dependence of the carrier concentration and Hall mobility indicated that the n-type films were heavily compensated having acceptor concentrations N A≳1018 cm-3. It was found that the acceptor and donor concentrations were essentially independent of Zn/Se pressure ratio present during growth.

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