Electron spin resonance in the two-dimensional electron gas of a GaAs-GaxIn1-xP heterostructure

M. Dobers; J. P. Vieren; M. Razeghi; M. Defour; F. Omnes

doi:10.1088/0268-1242/4/8/014

Electron spin resonance in the two-dimensional electron gas of a GaAs-Ga_xIn_1-xP heterostructure

M. Dobers^*, J. P. Vieren, M. Razeghi, M. Defour, F. Omnes

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The microwave-induced change of the magnetoresistivity of GaAs-GaInP heterostructures reveals resonant structure which is attributed to electron spin resonance of the two-dimensional conduction electrons. The spin splitting of the two lowest Landau levels has been investigated as a function of the magnetic field. From these studies the authors obtain the dependence of the g-factor on the magnetic field and the Landau level. These results are compared with those obtained in GaAs-AlGaAs heterostructures.

Original language	English (US)
Article number	014
Pages (from-to)	687-690
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	4
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/4/8/014
State	Published - Dec 1 1989

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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abstract = "The microwave-induced change of the magnetoresistivity of GaAs-GaInP heterostructures reveals resonant structure which is attributed to electron spin resonance of the two-dimensional conduction electrons. The spin splitting of the two lowest Landau levels has been investigated as a function of the magnetic field. From these studies the authors obtain the dependence of the g-factor on the magnetic field and the Landau level. These results are compared with those obtained in GaAs-AlGaAs heterostructures.",

author = "M. Dobers and Vieren, {J. P.} and M. Razeghi and M. Defour and F. Omnes",

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T1 - Electron spin resonance in the two-dimensional electron gas of a GaAs-GaxIn1-xP heterostructure

AU - Dobers, M.

AU - Vieren, J. P.

AU - Razeghi, M.

AU - Defour, M.

AU - Omnes, F.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - The microwave-induced change of the magnetoresistivity of GaAs-GaInP heterostructures reveals resonant structure which is attributed to electron spin resonance of the two-dimensional conduction electrons. The spin splitting of the two lowest Landau levels has been investigated as a function of the magnetic field. From these studies the authors obtain the dependence of the g-factor on the magnetic field and the Landau level. These results are compared with those obtained in GaAs-AlGaAs heterostructures.

AB - The microwave-induced change of the magnetoresistivity of GaAs-GaInP heterostructures reveals resonant structure which is attributed to electron spin resonance of the two-dimensional conduction electrons. The spin splitting of the two lowest Landau levels has been investigated as a function of the magnetic field. From these studies the authors obtain the dependence of the g-factor on the magnetic field and the Landau level. These results are compared with those obtained in GaAs-AlGaAs heterostructures.

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