Electron spin resonance in the two-dimensional electron gas of a GaAs-GaxIn1-xP heterostructure

M. Dobers*, J. P. Vieren, M. Razeghi, M. Defour, F. Omnes

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The microwave-induced change of the magnetoresistivity of GaAs-GaInP heterostructures reveals resonant structure which is attributed to electron spin resonance of the two-dimensional conduction electrons. The spin splitting of the two lowest Landau levels has been investigated as a function of the magnetic field. From these studies the authors obtain the dependence of the g-factor on the magnetic field and the Landau level. These results are compared with those obtained in GaAs-AlGaAs heterostructures.

Original languageEnglish (US)
Article number014
Pages (from-to)687-690
Number of pages4
JournalSemiconductor Science and Technology
Volume4
Issue number8
DOIs
StatePublished - Dec 1 1989

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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