Electron-spin resonance of the two-dimensional electron gas in Ga0.47In0.53As-InP heterostructures

M. Dobers; J. P. Vieren; Y. Guldner; P. Bove; F. Omnes; M. Razeghi

doi:10.1103/PhysRevB.40.8075

Electron-spin resonance of the two-dimensional electron gas in Ga0.47In0.53As-InP heterostructures

M. Dobers^*, J. P. Vieren, Y. Guldner, P. Bove, F. Omnes, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

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Abstract

The microwave-induced change of the magnetoresistivity of Ga0.47In0.53As-InP heterostructures reveals resonant structure which is attributed to electron-spin resonance of the two-dimensional conduction electrons. With microwave frequencies up to 480 GHz and in magnetic fields up to 12 T, we studied the spin splitting of the two lowest Landau levels in different samples. The spin splitting of these Landau levels is a quadratic function of the magnetic field and its extrapolation to zero magnetic field leads to vanishing spin splitting. The g factors depend on the magnetic field B and the Landau level N as follows: g(B,N)=g0-c(N+1/2)B, where g0 and c are sample-dependent parameters, which are of the order of g04.1 and c0.08 T-1, in the studied heterostructures.

Original language	English (US)
Pages (from-to)	8075-8078
Number of pages	4
Journal	Physical Review B
Volume	40
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevB.40.8075
State	Published - 1989

ASJC Scopus subject areas

Condensed Matter Physics

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title = "Electron-spin resonance of the two-dimensional electron gas in Ga0.47In0.53As-InP heterostructures",

abstract = "The microwave-induced change of the magnetoresistivity of Ga0.47In0.53As-InP heterostructures reveals resonant structure which is attributed to electron-spin resonance of the two-dimensional conduction electrons. With microwave frequencies up to 480 GHz and in magnetic fields up to 12 T, we studied the spin splitting of the two lowest Landau levels in different samples. The spin splitting of these Landau levels is a quadratic function of the magnetic field and its extrapolation to zero magnetic field leads to vanishing spin splitting. The g factors depend on the magnetic field B and the Landau level N as follows: g(B,N)=g0-c(N+1/2)B, where g0 and c are sample-dependent parameters, which are of the order of g04.1 and c0.08 T-1, in the studied heterostructures.",

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T1 - Electron-spin resonance of the two-dimensional electron gas in Ga0.47In0.53As-InP heterostructures

AU - Dobers, M.

AU - Vieren, J. P.

AU - Guldner, Y.

AU - Bove, P.

AU - Omnes, F.

AU - Razeghi, M.

PY - 1989

Y1 - 1989

N2 - The microwave-induced change of the magnetoresistivity of Ga0.47In0.53As-InP heterostructures reveals resonant structure which is attributed to electron-spin resonance of the two-dimensional conduction electrons. With microwave frequencies up to 480 GHz and in magnetic fields up to 12 T, we studied the spin splitting of the two lowest Landau levels in different samples. The spin splitting of these Landau levels is a quadratic function of the magnetic field and its extrapolation to zero magnetic field leads to vanishing spin splitting. The g factors depend on the magnetic field B and the Landau level N as follows: g(B,N)=g0-c(N+1/2)B, where g0 and c are sample-dependent parameters, which are of the order of g04.1 and c0.08 T-1, in the studied heterostructures.

AB - The microwave-induced change of the magnetoresistivity of Ga0.47In0.53As-InP heterostructures reveals resonant structure which is attributed to electron-spin resonance of the two-dimensional conduction electrons. With microwave frequencies up to 480 GHz and in magnetic fields up to 12 T, we studied the spin splitting of the two lowest Landau levels in different samples. The spin splitting of these Landau levels is a quadratic function of the magnetic field and its extrapolation to zero magnetic field leads to vanishing spin splitting. The g factors depend on the magnetic field B and the Landau level N as follows: g(B,N)=g0-c(N+1/2)B, where g0 and c are sample-dependent parameters, which are of the order of g04.1 and c0.08 T-1, in the studied heterostructures.

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Electron-spin resonance of the two-dimensional electron gas in Ga0.47In0.53As-InP heterostructures

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