Electron Transport Properties of Ga0.51In0.49P for Device Applications

Cengiz Besikci, Manijeh Razeghi

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

We present Monte Carlo calculations of steady-state and transient electron transport properties of Ga0.51In0.4P. We have made a simulation-based comparison between Ga0.51In0.49P and AlxGa1-x As (x = 0.2,0.3). Our Monte Carlo data show that transport properties of Ga0.51In0.49P are favorable, and when the other advantages of the GaInP/GaAs system are also taken into account, this material is a good choice to replace AlxGa1_xAs (x > 0.3). We have also calculated electron drift and Hall mobilities in Ga0.51In0.49P as a function of impurity concentration and temperature, and determined the effects of different scattering mechanisms on the low-field mobility. Calculated results are in good agreement with the measurements on metal organic chemical vapor deposition (MOCVD) grown samples with Hall mobilities within a factor of 0.5 of the calculated theoretical limit. It has also been found that alloy scattering is an important mobility degrading mechanism in lightly doped material at low temperatures.

Original languageEnglish (US)
Pages (from-to)1066-1069
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume41
Issue number6
DOIs
StatePublished - Jan 1 1994

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Electron Transport Properties of Ga0.51In0.49P for Device Applications'. Together they form a unique fingerprint.

Cite this