Electron Transport Properties of Ga0.51In0.49P for Device Applications

Cengiz Besikci, M. Razeghi

Research output: Contribution to journalArticlepeer-review

21 Scopus citations


We present Monte Carlo calculations of steady-state and transient electron transport properties of Ga0.51In0.4P. We have made a simulation-based comparison between Ga0.51In0.49P and AlxGa1-x As (x = 0.2,0.3). Our Monte Carlo data show that transport properties of Ga0.51In0.49P are favorable, and when the other advantages of the GaInP/GaAs system are also taken into account, this material is a good choice to replace AlxGa1_xAs (x > 0.3). We have also calculated electron drift and Hall mobilities in Ga0.51In0.49P as a function of impurity concentration and temperature, and determined the effects of different scattering mechanisms on the low-field mobility. Calculated results are in good agreement with the measurements on metal organic chemical vapor deposition (MOCVD) grown samples with Hall mobilities within a factor of 0.5 of the calculated theoretical limit. It has also been found that alloy scattering is an important mobility degrading mechanism in lightly doped material at low temperatures.

Original languageEnglish (US)
Pages (from-to)1066-1069
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number6
StatePublished - Jun 1994

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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