Abstract
We present Monte Carlo calculations of steady-state and transient electron transport properties of Ga0.51In0.4P. We have made a simulation-based comparison between Ga0.51In0.49P and AlxGa1-x As (x = 0.2,0.3). Our Monte Carlo data show that transport properties of Ga0.51In0.49P are favorable, and when the other advantages of the GaInP/GaAs system are also taken into account, this material is a good choice to replace AlxGa1_xAs (x > 0.3). We have also calculated electron drift and Hall mobilities in Ga0.51In0.49P as a function of impurity concentration and temperature, and determined the effects of different scattering mechanisms on the low-field mobility. Calculated results are in good agreement with the measurements on metal organic chemical vapor deposition (MOCVD) grown samples with Hall mobilities within a factor of 0.5 of the calculated theoretical limit. It has also been found that alloy scattering is an important mobility degrading mechanism in lightly doped material at low temperatures.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1066-1069 |
| Number of pages | 4 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 41 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jun 1994 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering