Electron Transport Properties of Ga0.51In0.49P for Device Applications

Keyphrases

• Device Application 100%
• Electron Transport Properties 100%
• Hall Mobility 100%
• Transport Properties 50%
• Simulation-based 50%
• Steady State 50%
• Low Temperature 50%
• Scattering Mechanism 50%
• Metal-organic Chemical Vapor Deposition (MOCVD) 50%
• Monte Carlo Calculation 50%
• Monte Carlo 50%
• Gallium Arsenide 50%
• Lightly Doped 50%
• Alloy Scattering 50%
• GaInP 50%
• Doped Materials 50%
• Impurity Concentration 50%
• AlxGa1-xN 50%
• Degrading Mechanism 50%
• Transient Electron Transport 50%
• Electron Drift Mobility 50%
• Low-field Mobility 50%

Material Science

• Hall Mobility 100%
• Electron Transfer 100%
• Gallium Arsenide 50%
• Metal-Organic Chemical Vapor Deposition 50%

Chemical Engineering

• Chemical Vapor Deposition 100%
• Vapor Deposition 100%