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Electron Transport Properties of Ga0.51In0.49P for Device Applications
Cengiz Besikci,
M. Razeghi
Electrical and Computer Engineering
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Contribution to journal
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Article
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peer-review
21
Scopus citations
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mobility
100%
transport
75%
scattering
50%
monte carlo method
50%
electrons
50%
data
25%
devices
25%
comparative evaluations
25%
alloys
25%
simulation
25%
applications
25%
organometallic compounds
25%
concentration
25%
steady-state conditions
25%
chemical vapor deposition
25%
doped materials
25%
impurities
25%
gallium arsenides
25%
electron drift
25%
Chemistry
Transport Property
75%
Electron Transport
50%
Scattering
50%
Reaction Temperature
50%
Compound Mobility
50%
Electron Particle
25%
Doped Compound
25%
Concentration
25%
Sample
25%
Alloy
25%
Simulation
25%
Application
25%
Device
25%
Impurity
25%
Physics
Transport Properties
75%
Monte Carlo
50%
Scattering
50%
Temperature
50%
Mobility
50%
Steady State
25%
Impurities
25%
Metalorganic Chemical Vapor Deposition
25%
Simulation
25%
Alloy
25%
Utilization
25%
Calculation
25%
Transients
25%
Nursing and Health Professions
Device Material
50%
Temperature
50%
Measurement
25%
Vapor
25%
Sample
25%
Devices
25%
Calculation
25%
Metal
25%
Alloy
25%
Material Science
Hall Mobility
50%
Gallium Arsenide
25%
Impurity
25%
Material
25%