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Electron Transport Properties of Ga0.51In0.49P for Device Applications
Cengiz Besikci,
M. Razeghi
Electrical and Computer Engineering
Research output
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Contribution to journal
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Article
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peer-review
21
Scopus citations
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Keyphrases
Device Application
100%
Electron Transport Properties
100%
Hall Mobility
100%
Transport Properties
50%
Simulation-based
50%
Steady State
50%
Low Temperature
50%
Scattering Mechanism
50%
Metal-organic Chemical Vapor Deposition (MOCVD)
50%
Monte Carlo Calculation
50%
Monte Carlo
50%
Gallium Arsenide
50%
Lightly Doped
50%
Alloy Scattering
50%
GaInP
50%
Doped Materials
50%
Impurity Concentration
50%
AlxGa1-xN
50%
Degrading Mechanism
50%
Transient Electron Transport
50%
Electron Drift Mobility
50%
Low-field Mobility
50%
Material Science
Hall Mobility
100%
Electron Transfer
100%
Gallium Arsenide
50%
Metal-Organic Chemical Vapor Deposition
50%
Chemical Engineering
Chemical Vapor Deposition
100%
Vapor Deposition
100%