Electron-transporting thiophene-based semiconductors exhibiting very high field effect mobilities

Antonio Facchetti; Myung Han Yoon; Tobin J. Marks

doi:10.1557/proc-814-i12.2

Electron-transporting thiophene-based semiconductors exhibiting very high field effect mobilities

Antonio Facchetti^*, Myung Han Yoon, Tobin J. Marks

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Conference article › peer-review

Abstract

Organic semiconductors exhibiting complementary n-type carrier mobility are the key components for the development of the field of "plastic electronics". We present here a novel series of oligothiophenes designed to improve performance and stability under electron-transporting conditions. Furthermore, the key structural features of these compounds allows additional modifications of the n-type conducting core to achieve material solubility and processability. Thin film transistor (TFT) devices were fabricated employing both vacuum-and solution-deposited semiconducting layers. Field-effect transistor measurements indicate that all the members of this new series are n-type semiconductors with mobilities and I_on: I_off ratios approaching 1 cm²/(Vs) and 10⁷, respectively. This family represents a key milestone in the design, understanding, and development of the next generation of highly efficient n-type OTFT components.

Original language	English (US)
Pages (from-to)	331-336
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	814
DOIs	https://doi.org/10.1557/proc-814-i12.2
State	Published - 2004
Event	Flexible Electronics 2004 - Materials and Device Technology - San Francisco, CA, United States Duration: Apr 13 2004 → Apr 16 2004

ASJC Scopus subject areas

Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
General Materials Science

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Cite this

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title = "Electron-transporting thiophene-based semiconductors exhibiting very high field effect mobilities",

abstract = "Organic semiconductors exhibiting complementary n-type carrier mobility are the key components for the development of the field of {"}plastic electronics{"}. We present here a novel series of oligothiophenes designed to improve performance and stability under electron-transporting conditions. Furthermore, the key structural features of these compounds allows additional modifications of the n-type conducting core to achieve material solubility and processability. Thin film transistor (TFT) devices were fabricated employing both vacuum-and solution-deposited semiconducting layers. Field-effect transistor measurements indicate that all the members of this new series are n-type semiconductors with mobilities and Ion: Ioff ratios approaching 1 cm2/(Vs) and 107, respectively. This family represents a key milestone in the design, understanding, and development of the next generation of highly efficient n-type OTFT components.",

author = "Antonio Facchetti and Yoon, {Myung Han} and Marks, {Tobin J.}",

year = "2004",

doi = "10.1557/proc-814-i12.2",

language = "English (US)",

volume = "814",

pages = "331--336",

journal = "Materials Research Society Symposium Proceedings",

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publisher = "Materials Research Society",

note = "Flexible Electronics 2004 - Materials and Device Technology ; Conference date: 13-04-2004 Through 16-04-2004",

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AU - Facchetti, Antonio

AU - Yoon, Myung Han

AU - Marks, Tobin J.

PY - 2004

Y1 - 2004

N2 - Organic semiconductors exhibiting complementary n-type carrier mobility are the key components for the development of the field of "plastic electronics". We present here a novel series of oligothiophenes designed to improve performance and stability under electron-transporting conditions. Furthermore, the key structural features of these compounds allows additional modifications of the n-type conducting core to achieve material solubility and processability. Thin film transistor (TFT) devices were fabricated employing both vacuum-and solution-deposited semiconducting layers. Field-effect transistor measurements indicate that all the members of this new series are n-type semiconductors with mobilities and Ion: Ioff ratios approaching 1 cm2/(Vs) and 107, respectively. This family represents a key milestone in the design, understanding, and development of the next generation of highly efficient n-type OTFT components.

AB - Organic semiconductors exhibiting complementary n-type carrier mobility are the key components for the development of the field of "plastic electronics". We present here a novel series of oligothiophenes designed to improve performance and stability under electron-transporting conditions. Furthermore, the key structural features of these compounds allows additional modifications of the n-type conducting core to achieve material solubility and processability. Thin film transistor (TFT) devices were fabricated employing both vacuum-and solution-deposited semiconducting layers. Field-effect transistor measurements indicate that all the members of this new series are n-type semiconductors with mobilities and Ion: Ioff ratios approaching 1 cm2/(Vs) and 107, respectively. This family represents a key milestone in the design, understanding, and development of the next generation of highly efficient n-type OTFT components.

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JF - Materials Research Society Symposium Proceedings

T2 - Flexible Electronics 2004 - Materials and Device Technology

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ER -

Electron-transporting thiophene-based semiconductors exhibiting very high field effect mobilities

Abstract

ASJC Scopus subject areas

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