TY - GEN
T1 - Electronic and magnetic properties of ferromagnetic p-(In,Mn)As/n-InAs heterojunctions
AU - May, S. J.
AU - Wessels, B. W.
PY - 2004
Y1 - 2004
N2 - The (In,Mn)AS/InAS p-n heterojunctions were fabricated, and their electronic and magnetic properties were characterized. The magnetic field dependence of the I-V characteristics of the heterojunctions were measured. In a junction consisting of a p-type, two phase ferromagnetic In 0.91Mn 0.09As film and n-type InAs, a shift in the I-V characteristics was observed with an applied magnetic field. The magnetic fields applied perpendicular to the plane of the film led to a decrease in conductance at all temperatures and applied fields. The results show that the magnetoresistive properties of these heterojunctions make them suitable for use in spintronic devices.
AB - The (In,Mn)AS/InAS p-n heterojunctions were fabricated, and their electronic and magnetic properties were characterized. The magnetic field dependence of the I-V characteristics of the heterojunctions were measured. In a junction consisting of a p-type, two phase ferromagnetic In 0.91Mn 0.09As film and n-type InAs, a shift in the I-V characteristics was observed with an applied magnetic field. The magnetic fields applied perpendicular to the plane of the film led to a decrease in conductance at all temperatures and applied fields. The results show that the magnetoresistive properties of these heterojunctions make them suitable for use in spintronic devices.
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U2 - 10.1109/DRC.2004.1367813
DO - 10.1109/DRC.2004.1367813
M3 - Conference contribution
AN - SCOPUS:18044391068
SN - 0780382846
T3 - Device Research Conference - Conference Digest, DRC
SP - 121
EP - 122
BT - Device Research Conference - Conference Digest, 62nd DRC
T2 - Device Research Conference - Conference Digest, 62nd DRC
Y2 - 21 June 2004 through 23 June 2004
ER -