Electronic and magnetic properties of ferromagnetic p-(In,Mn)As/n-InAs heterojunctions

S. J. May, Bruce W Wessels*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The (In,Mn)AS/InAS p-n heterojunctions were fabricated, and their electronic and magnetic properties were characterized. The magnetic field dependence of the I-V characteristics of the heterojunctions were measured. In a junction consisting of a p-type, two phase ferromagnetic In 0.91Mn 0.09As film and n-type InAs, a shift in the I-V characteristics was observed with an applied magnetic field. The magnetic fields applied perpendicular to the plane of the film led to a decrease in conductance at all temperatures and applied fields. The results show that the magnetoresistive properties of these heterojunctions make them suitable for use in spintronic devices.

Original languageEnglish (US)
Title of host publicationDevice Research Conference - Conference Digest, 62nd DRC
Pages121-122
Number of pages2
DOIs
StatePublished - Dec 1 2004
EventDevice Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States
Duration: Jun 21 2004Jun 23 2004

Other

OtherDevice Research Conference - Conference Digest, 62nd DRC
CountryUnited States
CityNotre Dame, IN
Period6/21/046/23/04

ASJC Scopus subject areas

  • Engineering(all)

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