Electronic and magnetotransport properties of ferromagnetic p -(In,Mn)As n -InAs heterojunctions

S. J. May*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

The electronic and magnetotransport properties of epitaxial p -(In,Mn)As n -InAs heterojunctions have been studied. The junctions were formed by depositing ferromagnetic (In,Mn)As films on InAs (100) substrates using metal-organic vapor phase epitaxy. The current-voltage characteristics of the junctions have been measured from 78 to 295 K. At temperatures below 150 K, ohmic current dominate transport at low bias, followed by defect-assisted tunneling current with increasing bias. At high forward bias, junction transport is dominated by diffusion current. The magnetoresistance of the junctions was measured as a function of forward bias and applied magnetic field. The magnitude and field dependence of the longitudinal magnetoresistance depend directly on the junction transport mechanism. Under high bias, a magnetoresistance of 15.7% at 78 K and 8% at 295 K in a 4400 Oe field was measured in an In0.96Mn0.04As InAs junction. At 78 K, the high bias magnetoresistance increases linearly with magnetic field from 1000 to 4600 Oe.

Original languageEnglish (US)
Pages (from-to)1769-1772
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number4
DOIs
StatePublished - 2005

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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