Electronic and optical properties of deep levels in iron-doped InAsP alloys

K. Huang*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The electronic and optical properties of deep levels in Fe-doped InAsP grown by organometallic vapor phase epitaxy are investigated. Two deep levels associated with Fe are observed in the alloys. From measurements of the temperature dependence of resistivity, photoluminescence, and photoconductivity, the energy levels of iron in the alloys are determined for a wide range of compositions. The variation of the positions of the Fe energy levels as a function of composition is explained in terms of the vacuum-referred binding energies.

Original languageEnglish (US)
Pages (from-to)6770-6774
Number of pages5
JournalJournal of Applied Physics
Volume64
Issue number12
DOIs
StatePublished - Dec 1 1988

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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