The incorporation of Fe into InP grown by organometallic vapor-phase epitaxy using ferrocene as the dopant source has been studied. Room temperature resistivity of the doped epitaxial layers varied from 0.14 to 7×10 4 Ω cm. Photoluminescence measurements at 10 K indicated that the predominant deep radiative transition in the doped InP was at 1.07 eV. The relative intensity of this band depended on the ferrocene partial pressure.
ASJC Scopus subject areas
- Physics and Astronomy(all)