Electronic and optical properties of Fe-doped InP prepared by organometallic vapor-phase epitaxy

K. Huang*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

The incorporation of Fe into InP grown by organometallic vapor-phase epitaxy using ferrocene as the dopant source has been studied. Room temperature resistivity of the doped epitaxial layers varied from 0.14 to 7×10 4 Ω cm. Photoluminescence measurements at 10 K indicated that the predominant deep radiative transition in the doped InP was at 1.07 eV. The relative intensity of this band depended on the ferrocene partial pressure.

Original languageEnglish (US)
Pages (from-to)4342-4344
Number of pages3
JournalJournal of Applied Physics
Volume60
Issue number12
DOIs
StatePublished - Dec 1 1986

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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