Electronic defects in the halide antiperovskite semiconductor Hg3Se2 I2

Keyphrases

• Anti-perovskite 100%
• Capture Cross Section 50%
• Chalcohalide 50%
• Charge Transport 50%
• Compound Semiconductors 50%
• Conductivity Measurement 50%
• Crystal Detector 50%
• Crystal Quality 50%
• Dark Conductivity 50%
• Dark Current 50%
• Deep Traps 50%
• Density Functional Calculations 50%
• Density Functional Theory (DFT) Calculations 50%
• Detector Performance 50%
• Electronic Defects 100%
• Halide Perovskites 50%
• Halides 100%
• Hard Radiation Detection 50%
• Impurities 50%
• Intrinsic Vacancy 50%
• Low Temperature 50%
• Measurement Principle 50%
• Persistent Photoconductivity 50%
• Photoconducting Materials 50%
• Photoconductivity Measurement 50%
• Quality Performance 50%
• Radiation Detection 50%
• Room Temperature 50%
• Semi-insulating 50%
• Semiconductors 100%
• Spectroscopic Measurement 50%
• Temperature Effect 50%
• Thermally Stimulated Current Spectroscopy 100%
• Vacancy Defects 50%

Chemistry

• Ambient Reaction Temperature 50%
• Charge Transfer 50%
• Crystal Vacancy 50%
• Density Functional Theory 100%
• electronics 100%
• First Principle 50%
• Halide 100%
• Photoconductivity 100%
• Thermally Stimulated Current 100%

Material Science

• Compound Semiconductor 50%
• Density 100%
• Halide 100%
• Photoconducting Material 50%
• Photoconductivity 100%
• Photovoltaics 50%
• Vacancy Defect 50%