Electronic interlayer states in hexagonal boron nitride

A. Catellani; M. Posternak; A. Baldereschi; H. J.F. Jansen; Arthur J Freeman

doi:10.1103/PhysRevB.32.6997

Electronic interlayer states in hexagonal boron nitride

A. Catellani^*, M. Posternak, A. Baldereschi, H. J.F. Jansen, Arthur J Freeman

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

Full-potential self-consistent linearized augmented-plane-wave calculations for hexagonal boron nitride show the existence of unoccupied interlayer states similar to those found in pure and intercalated graphite. Furthermore, in contradiction to the currently accepted picture, the resulting energy-band structure indicates that hexagonal BN is an indirect-gap insulator.

Original language	English (US)
Pages (from-to)	6997-6999
Number of pages	3
Journal	Physical Review B
Volume	32
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevB.32.6997
State	Published - Jan 1 1985

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.32.6997

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title = "Electronic interlayer states in hexagonal boron nitride",

abstract = "Full-potential self-consistent linearized augmented-plane-wave calculations for hexagonal boron nitride show the existence of unoccupied interlayer states similar to those found in pure and intercalated graphite. Furthermore, in contradiction to the currently accepted picture, the resulting energy-band structure indicates that hexagonal BN is an indirect-gap insulator.",

author = "A. Catellani and M. Posternak and A. Baldereschi and Jansen, {H. J.F.} and Freeman, {Arthur J}",

year = "1985",

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doi = "10.1103/PhysRevB.32.6997",

language = "English (US)",

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AU - Posternak, M.

AU - Baldereschi, A.

AU - Jansen, H. J.F.

AU - Freeman, Arthur J

PY - 1985/1/1

Y1 - 1985/1/1

N2 - Full-potential self-consistent linearized augmented-plane-wave calculations for hexagonal boron nitride show the existence of unoccupied interlayer states similar to those found in pure and intercalated graphite. Furthermore, in contradiction to the currently accepted picture, the resulting energy-band structure indicates that hexagonal BN is an indirect-gap insulator.

AB - Full-potential self-consistent linearized augmented-plane-wave calculations for hexagonal boron nitride show the existence of unoccupied interlayer states similar to those found in pure and intercalated graphite. Furthermore, in contradiction to the currently accepted picture, the resulting energy-band structure indicates that hexagonal BN is an indirect-gap insulator.

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DO - 10.1103/PhysRevB.32.6997

M3 - Article

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JO - Physical Review B-Condensed Matter

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SN - 0163-1829

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ER -

Electronic interlayer states in hexagonal boron nitride

Abstract

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