Electronic interlayer states in hexagonal boron nitride

A. Catellani*, M. Posternak, A. Baldereschi, H. J.F. Jansen, Arthur J Freeman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

54 Scopus citations


Full-potential self-consistent linearized augmented-plane-wave calculations for hexagonal boron nitride show the existence of unoccupied interlayer states similar to those found in pure and intercalated graphite. Furthermore, in contradiction to the currently accepted picture, the resulting energy-band structure indicates that hexagonal BN is an indirect-gap insulator.

Original languageEnglish (US)
Pages (from-to)6997-6999
Number of pages3
JournalPhysical Review B
Issue number10
StatePublished - Jan 1 1985

ASJC Scopus subject areas

  • Condensed Matter Physics


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