Electronic properties of InAsP InAs strained-layer superlattices prepared by hydride vapor phase epitaxy

P. J. Wang*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Fingerprint

Dive into the research topics of 'Electronic properties of InAsP InAs strained-layer superlattices prepared by hydride vapor phase epitaxy'. Together they form a unique fingerprint.

Engineering & Materials Science

Chemical Compounds

Physics & Astronomy