ELECTRONIC PROPERTIES OF InAsP/InP STRAINED-LAYER SUPERLATTICES.

P. J. Wang*, B. W. Wessels

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

InAs//xP//1// minus //x/InP superlattices with 0. 2 less than equivalent to x less than equivalent to 0. 7 have been grown by hydride vapor phase epitaxy on to InP(100) substrates and characterized with magnetotransport measurements. A negative magnetoresistance was observed at low temperatures and attributed to localization and electron correlation effects in the two dimensional electron gas.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
Pages415-420
Number of pages6
Edition79
StatePublished - Dec 1 1986

Publication series

NameInstitute of Physics Conference Series
Number79
ISSN (Print)0373-0751

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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