ELECTRONIC PROPERTIES OF InAsP/InP STRAINED-LAYER SUPERLATTICES.

P. J. Wang; B. W. Wessels

ELECTRONIC PROPERTIES OF InAsP/InP STRAINED-LAYER SUPERLATTICES.

P. J. Wang^*, B. W. Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

InAs//xP//1// minus //x/InP superlattices with 0. 2 less than equivalent to x less than equivalent to 0. 7 have been grown by hydride vapor phase epitaxy on to InP(100) substrates and characterized with magnetotransport measurements. A negative magnetoresistance was observed at low temperatures and attributed to localization and electron correlation effects in the two dimensional electron gas.

Original language	English (US)
Title of host publication	Institute of Physics Conference Series
Pages	415-420
Number of pages	6
Edition	79
State	Published - Dec 1 1986

Publication series

Name	Institute of Physics Conference Series
Number	79
ISSN (Print)	0373-0751

ASJC Scopus subject areas

General Physics and Astronomy

Cite this

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title = "ELECTRONIC PROPERTIES OF InAsP/InP STRAINED-LAYER SUPERLATTICES.",

abstract = "InAs//xP//1// minus //x/InP superlattices with 0. 2 less than equivalent to x less than equivalent to 0. 7 have been grown by hydride vapor phase epitaxy on to InP(100) substrates and characterized with magnetotransport measurements. A negative magnetoresistance was observed at low temperatures and attributed to localization and electron correlation effects in the two dimensional electron gas.",

author = "Wang, {P. J.} and Wessels, {B. W.}",

year = "1986",

month = dec,

day = "1",

language = "English (US)",

isbn = "0854981705",

series = "Institute of Physics Conference Series",

number = "79",

pages = "415--420",

booktitle = "Institute of Physics Conference Series",

edition = "79",

}

TY - GEN

T1 - ELECTRONIC PROPERTIES OF InAsP/InP STRAINED-LAYER SUPERLATTICES.

AU - Wang, P. J.

AU - Wessels, B. W.

PY - 1986/12/1

Y1 - 1986/12/1

N2 - InAs//xP//1// minus //x/InP superlattices with 0. 2 less than equivalent to x less than equivalent to 0. 7 have been grown by hydride vapor phase epitaxy on to InP(100) substrates and characterized with magnetotransport measurements. A negative magnetoresistance was observed at low temperatures and attributed to localization and electron correlation effects in the two dimensional electron gas.

AB - InAs//xP//1// minus //x/InP superlattices with 0. 2 less than equivalent to x less than equivalent to 0. 7 have been grown by hydride vapor phase epitaxy on to InP(100) substrates and characterized with magnetotransport measurements. A negative magnetoresistance was observed at low temperatures and attributed to localization and electron correlation effects in the two dimensional electron gas.

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M3 - Conference contribution

AN - SCOPUS:0022992231

SN - 0854981705

T3 - Institute of Physics Conference Series

SP - 415

EP - 420

BT - Institute of Physics Conference Series

ER -

ELECTRONIC PROPERTIES OF InAsP/InP STRAINED-LAYER SUPERLATTICES.

Abstract

Publication series

ASJC Scopus subject areas

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