InP is a potentially important semiconductor for high speed device applications. A number of these devices critically depend on having a low interface state concentration. However the detailed mechanism controlling interface state formation in InP is still not well understood. In this paper, the formation and properties of InP interface states resulting from surface preparation and contact alloying were investigated using photocapacitance spectroscopy, photoresponse and capacitance-voltage measurements. It was found that the photocapacitance, photocurrent response and barrier energy were sensitive to surface preparation of the InP prior to metal deposition.
|Original language||English (US)|
|Number of pages||2|
|Journal||Electrochemical Society Extended Abstracts|
|State||Published - Dec 1 1984|
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