Electronic properties of Mn acceptors in (In,Mn)As grown by metalorganic vapor phase epitaxy

S. J. May; A. J. Blattner; B. W. Wessels

doi:10.1016/j.physb.2003.09.223

Electronic properties of Mn acceptors in (In,Mn)As grown by metalorganic vapor phase epitaxy

S. J. May, A. J. Blattner, B. W. Wessels^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

10 Scopus citations

Abstract

In this study, the nature of the Mn electronic level in (In,Mn)As was investigated. (In,Mn)As thin films were epitaxially deposited on GaAs (0 0 1) substrates using metalorganic vapor phase epitaxy. Electronic transport properties were determined from Hall effect measurements over a temperature range of 78-300 K and all films were found to be p-type. Mn was found to act as a shallow acceptor with an activation energy ranging from 22 to 16 meV as the hole concentration increased from 8.5×10¹⁷ to 1.7×10 ¹⁸cm^-3. In heavily doped films, a large percentage of Mn is found to be electronically inactive and the hole concentrations are up to a factor of 10³ times smaller than the Mn concentration.

Original language	English (US)
Pages (from-to)	870-873
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	340-342
DOIs	https://doi.org/10.1016/j.physb.2003.09.223
State	Published - Dec 31 2003
Event	Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: Jul 28 2003 → Aug 1 2003

Funding

This work is supported by the NSF under the Spin Electronics Program ECS-0224210.

Keywords

Ferromagnetic semiconductors
Impurity levels
Manganese
Thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.physb.2003.09.223

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@article{3f07aa1855994ec689b998bfbcbc2998,

title = "Electronic properties of Mn acceptors in (In,Mn)As grown by metalorganic vapor phase epitaxy",

abstract = "In this study, the nature of the Mn electronic level in (In,Mn)As was investigated. (In,Mn)As thin films were epitaxially deposited on GaAs (0 0 1) substrates using metalorganic vapor phase epitaxy. Electronic transport properties were determined from Hall effect measurements over a temperature range of 78-300 K and all films were found to be p-type. Mn was found to act as a shallow acceptor with an activation energy ranging from 22 to 16 meV as the hole concentration increased from 8.5×1017 to 1.7×10 18cm-3. In heavily doped films, a large percentage of Mn is found to be electronically inactive and the hole concentrations are up to a factor of 103 times smaller than the Mn concentration.",

keywords = "Ferromagnetic semiconductors, Impurity levels, Manganese, Thin films",

author = "May, {S. J.} and Blattner, {A. J.} and Wessels, {B. W.}",

note = "Funding Information: This work is supported by the NSF under the Spin Electronics Program ECS-0224210.; Proceedings of the 22nd International Conference on Defects in (ICDS-22) ; Conference date: 28-07-2003 Through 01-08-2003",

year = "2003",

month = dec,

day = "31",

doi = "10.1016/j.physb.2003.09.223",

language = "English (US)",

volume = "340-342",

pages = "870--873",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Electronic properties of Mn acceptors in (In,Mn)As grown by metalorganic vapor phase epitaxy

AU - May, S. J.

AU - Blattner, A. J.

AU - Wessels, B. W.

N1 - Funding Information: This work is supported by the NSF under the Spin Electronics Program ECS-0224210.

PY - 2003/12/31

Y1 - 2003/12/31

N2 - In this study, the nature of the Mn electronic level in (In,Mn)As was investigated. (In,Mn)As thin films were epitaxially deposited on GaAs (0 0 1) substrates using metalorganic vapor phase epitaxy. Electronic transport properties were determined from Hall effect measurements over a temperature range of 78-300 K and all films were found to be p-type. Mn was found to act as a shallow acceptor with an activation energy ranging from 22 to 16 meV as the hole concentration increased from 8.5×1017 to 1.7×10 18cm-3. In heavily doped films, a large percentage of Mn is found to be electronically inactive and the hole concentrations are up to a factor of 103 times smaller than the Mn concentration.

AB - In this study, the nature of the Mn electronic level in (In,Mn)As was investigated. (In,Mn)As thin films were epitaxially deposited on GaAs (0 0 1) substrates using metalorganic vapor phase epitaxy. Electronic transport properties were determined from Hall effect measurements over a temperature range of 78-300 K and all films were found to be p-type. Mn was found to act as a shallow acceptor with an activation energy ranging from 22 to 16 meV as the hole concentration increased from 8.5×1017 to 1.7×10 18cm-3. In heavily doped films, a large percentage of Mn is found to be electronically inactive and the hole concentrations are up to a factor of 103 times smaller than the Mn concentration.

KW - Ferromagnetic semiconductors

KW - Impurity levels

KW - Manganese

KW - Thin films

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U2 - 10.1016/j.physb.2003.09.223

DO - 10.1016/j.physb.2003.09.223

M3 - Conference article

AN - SCOPUS:0347764758

SN - 0921-4526

VL - 340-342

SP - 870

EP - 873

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 22nd International Conference on Defects in (ICDS-22)

Y2 - 28 July 2003 through 1 August 2003

ER -

Electronic properties of Mn acceptors in (In,Mn)As grown by metalorganic vapor phase epitaxy

Abstract

Funding

Keywords

ASJC Scopus subject areas

UN SDGs

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