Abstract
In this study, the nature of the Mn electronic level in (In,Mn)As was investigated. (In,Mn)As thin films were epitaxially deposited on GaAs (0 0 1) substrates using metalorganic vapor phase epitaxy. Electronic transport properties were determined from Hall effect measurements over a temperature range of 78-300 K and all films were found to be p-type. Mn was found to act as a shallow acceptor with an activation energy ranging from 22 to 16 meV as the hole concentration increased from 8.5×1017 to 1.7×10 18cm-3. In heavily doped films, a large percentage of Mn is found to be electronically inactive and the hole concentrations are up to a factor of 103 times smaller than the Mn concentration.
Original language | English (US) |
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Pages (from-to) | 870-873 |
Number of pages | 4 |
Journal | Physica B: Condensed Matter |
Volume | 340-342 |
DOIs | |
State | Published - Dec 31 2003 |
Event | Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: Jul 28 2003 → Aug 1 2003 |
Funding
This work is supported by the NSF under the Spin Electronics Program ECS-0224210.
Keywords
- Ferromagnetic semiconductors
- Impurity levels
- Manganese
- Thin films
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering