Electronic properties of Mn acceptors in (In,Mn)As grown by metalorganic vapor phase epitaxy

S. J. May; A. J. Blattner; B. W. Wessels

doi:10.1016/j.physb.2003.09.223

Electronic properties of Mn acceptors in (In,Mn)As grown by metalorganic vapor phase epitaxy

S. J. May, A. J. Blattner, B. W. Wessels^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

10 Scopus citations

Abstract

In this study, the nature of the Mn electronic level in (In,Mn)As was investigated. (In,Mn)As thin films were epitaxially deposited on GaAs (0 0 1) substrates using metalorganic vapor phase epitaxy. Electronic transport properties were determined from Hall effect measurements over a temperature range of 78-300 K and all films were found to be p-type. Mn was found to act as a shallow acceptor with an activation energy ranging from 22 to 16 meV as the hole concentration increased from 8.5×10¹⁷ to 1.7×10 ¹⁸cm^-3. In heavily doped films, a large percentage of Mn is found to be electronically inactive and the hole concentrations are up to a factor of 10³ times smaller than the Mn concentration.

Original language	English (US)
Pages (from-to)	870-873
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	340-342
DOIs	https://doi.org/10.1016/j.physb.2003.09.223
State	Published - Dec 31 2003
Event	Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: Jul 28 2003 → Aug 1 2003

Keywords

Ferromagnetic semiconductors
Impurity levels
Manganese
Thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.physb.2003.09.223

Cite this

@article{3f07aa1855994ec689b998bfbcbc2998,

title = "Electronic properties of Mn acceptors in (In,Mn)As grown by metalorganic vapor phase epitaxy",

abstract = "In this study, the nature of the Mn electronic level in (In,Mn)As was investigated. (In,Mn)As thin films were epitaxially deposited on GaAs (0 0 1) substrates using metalorganic vapor phase epitaxy. Electronic transport properties were determined from Hall effect measurements over a temperature range of 78-300 K and all films were found to be p-type. Mn was found to act as a shallow acceptor with an activation energy ranging from 22 to 16 meV as the hole concentration increased from 8.5×1017 to 1.7×10 18cm-3. In heavily doped films, a large percentage of Mn is found to be electronically inactive and the hole concentrations are up to a factor of 103 times smaller than the Mn concentration.",

keywords = "Ferromagnetic semiconductors, Impurity levels, Manganese, Thin films",

author = "May, {S. J.} and Blattner, {A. J.} and Wessels, {B. W.}",

note = "Funding Information: This work is supported by the NSF under the Spin Electronics Program ECS-0224210.; Proceedings of the 22nd International Conference on Defects in (ICDS-22) ; Conference date: 28-07-2003 Through 01-08-2003",

year = "2003",

month = dec,

day = "31",

doi = "10.1016/j.physb.2003.09.223",

language = "English (US)",

volume = "340-342",

pages = "870--873",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

}

TY - JOUR

T1 - Electronic properties of Mn acceptors in (In,Mn)As grown by metalorganic vapor phase epitaxy

AU - May, S. J.

AU - Blattner, A. J.

AU - Wessels, B. W.

N1 - Funding Information: This work is supported by the NSF under the Spin Electronics Program ECS-0224210.

PY - 2003/12/31

Y1 - 2003/12/31

N2 - In this study, the nature of the Mn electronic level in (In,Mn)As was investigated. (In,Mn)As thin films were epitaxially deposited on GaAs (0 0 1) substrates using metalorganic vapor phase epitaxy. Electronic transport properties were determined from Hall effect measurements over a temperature range of 78-300 K and all films were found to be p-type. Mn was found to act as a shallow acceptor with an activation energy ranging from 22 to 16 meV as the hole concentration increased from 8.5×1017 to 1.7×10 18cm-3. In heavily doped films, a large percentage of Mn is found to be electronically inactive and the hole concentrations are up to a factor of 103 times smaller than the Mn concentration.

AB - In this study, the nature of the Mn electronic level in (In,Mn)As was investigated. (In,Mn)As thin films were epitaxially deposited on GaAs (0 0 1) substrates using metalorganic vapor phase epitaxy. Electronic transport properties were determined from Hall effect measurements over a temperature range of 78-300 K and all films were found to be p-type. Mn was found to act as a shallow acceptor with an activation energy ranging from 22 to 16 meV as the hole concentration increased from 8.5×1017 to 1.7×10 18cm-3. In heavily doped films, a large percentage of Mn is found to be electronically inactive and the hole concentrations are up to a factor of 103 times smaller than the Mn concentration.

KW - Ferromagnetic semiconductors

KW - Impurity levels

KW - Manganese

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=0347764758&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347764758&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2003.09.223

DO - 10.1016/j.physb.2003.09.223

M3 - Conference article

AN - SCOPUS:0347764758

VL - 340-342

SP - 870

EP - 873

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

T2 - Proceedings of the 22nd International Conference on Defects in (ICDS-22)

Y2 - 28 July 2003 through 1 August 2003

ER -

Electronic properties of Mn acceptors in (In,Mn)As grown by metalorganic vapor phase epitaxy

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this