Electronic properties of Mn acceptors in (In,Mn)As grown by metalorganic vapor phase epitaxy

Chemistry

• Hole Concentration 100%
• Metallorganic Chemical Vapour Deposition 100%
• Transport Property 50%
• Electronic Property 50%
• Reaction Activation Energy 50%
• Hall Effect 50%
• Shallow Acceptor 50%

Physics

• Metalorganic Vapor Phase Epitaxy 100%
• Transport Properties 50%
• Thin Films 50%
• Photoelectric Emission 50%
• Energy Levels 50%

Material Science

• Hole Concentration 100%
• Thin Films 50%
• Gallium Arsenide 50%