Keyphrases
Activation Energy
33%
Doped Films
33%
Electronic Level
33%
Electronic Properties
100%
Electronic Transport Properties
33%
GaAs(001)
33%
Hall Effect Measurement
33%
Heavily Doped
33%
Hole Concentration
66%
InMnAs
100%
Metal Organic Vapor Phase Epitaxy (MOVPE)
100%
Mn Concentration
33%
P-type
33%
Shallow Acceptor
33%
Temperature Range
33%
Material Science
Activation Energy
50%
Electronic Property
100%
Film
100%
Gallium Arsenide
50%
Hole Concentration
100%
Thin Films
50%
Vapor Phase Epitaxy
100%
Physics
Activation Energy
50%
Metalorganic Vapor Phase Epitaxy
100%
Photoelectric Emission
50%
Thin Films
50%
Transport Property
50%
Engineering
Activation Energy
50%
Gallium Arsenide
50%
Hole Concentration
100%
Temperature Range
50%
Thin Films
50%