Electronic properties of Ni(Pc)I under pressure

Keizo Murata; Yorio Ohashi; Kazuhiko Murata; Julia A. Thompson; Masayuki Mori; Brian M. Hoffman

doi:10.1016/0379-6779(93)90324-P

Electronic properties of Ni(Pc)I under pressure

Keizo Murata, Yorio Ohashi, Kazuhiko Murata, Julia A. Thompson, Masayuki Mori, Brian M. Hoffman

Chemistry

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

With a dramatic development of a single crystal growth technique for high purity, high quality nickel phthalocyanine iodide, Ni(Pc)I, we examined th e temperature dependence of the resistivity between 0.9-300 K under pressures between 3 and 14.5 kbar. We found a clear metallic temperature dependence in resistance at all pressures and an insulating phase at low pressures accompanied by a strong non-linear conduction. The conductivity at low temperature exceeded 45,000 S/cm at 14.5 kbar, which is already 7 times higher than the necessary condition to obtain superconductivity in β-(BEDT-TTF)₂X salts.

Original language	English (US)
Pages (from-to)	1777-1782
Number of pages	6
Journal	Synthetic Metals
Volume	56
Issue number	1
DOIs	https://doi.org/10.1016/0379-6779(93)90324-P
State	Published - Mar 29 1993

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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abstract = "With a dramatic development of a single crystal growth technique for high purity, high quality nickel phthalocyanine iodide, Ni(Pc)I, we examined th e temperature dependence of the resistivity between 0.9-300 K under pressures between 3 and 14.5 kbar. We found a clear metallic temperature dependence in resistance at all pressures and an insulating phase at low pressures accompanied by a strong non-linear conduction. The conductivity at low temperature exceeded 45,000 S/cm at 14.5 kbar, which is already 7 times higher than the necessary condition to obtain superconductivity in β-(BEDT-TTF)2X salts.",

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T1 - Electronic properties of Ni(Pc)I under pressure

AU - Murata, Keizo

AU - Ohashi, Yorio

AU - Murata, Kazuhiko

AU - Thompson, Julia A.

AU - Mori, Masayuki

AU - Hoffman, Brian M.

PY - 1993/3/29

Y1 - 1993/3/29

N2 - With a dramatic development of a single crystal growth technique for high purity, high quality nickel phthalocyanine iodide, Ni(Pc)I, we examined th e temperature dependence of the resistivity between 0.9-300 K under pressures between 3 and 14.5 kbar. We found a clear metallic temperature dependence in resistance at all pressures and an insulating phase at low pressures accompanied by a strong non-linear conduction. The conductivity at low temperature exceeded 45,000 S/cm at 14.5 kbar, which is already 7 times higher than the necessary condition to obtain superconductivity in β-(BEDT-TTF)2X salts.

AB - With a dramatic development of a single crystal growth technique for high purity, high quality nickel phthalocyanine iodide, Ni(Pc)I, we examined th e temperature dependence of the resistivity between 0.9-300 K under pressures between 3 and 14.5 kbar. We found a clear metallic temperature dependence in resistance at all pressures and an insulating phase at low pressures accompanied by a strong non-linear conduction. The conductivity at low temperature exceeded 45,000 S/cm at 14.5 kbar, which is already 7 times higher than the necessary condition to obtain superconductivity in β-(BEDT-TTF)2X salts.

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Electronic properties of Ni(Pc)I under pressure

Abstract

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