Electronic properties of Ni(Pc)I under pressure

Keizo Murata, Yorio Ohashi, Kazuhiko Murata, Julia A. Thompson, Masayuki Mori, Brian M. Hoffman

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


With a dramatic development of a single crystal growth technique for high purity, high quality nickel phthalocyanine iodide, Ni(Pc)I, we examined th e temperature dependence of the resistivity between 0.9-300 K under pressures between 3 and 14.5 kbar. We found a clear metallic temperature dependence in resistance at all pressures and an insulating phase at low pressures accompanied by a strong non-linear conduction. The conductivity at low temperature exceeded 45,000 S/cm at 14.5 kbar, which is already 7 times higher than the necessary condition to obtain superconductivity in β-(BEDT-TTF)2X salts.

Original languageEnglish (US)
Pages (from-to)1777-1782
Number of pages6
JournalSynthetic Metals
Issue number1
StatePublished - Mar 29 1993

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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