Abstract
The dispersed fluorescence following pulsed dye laser excitation of the B2Σ+-X2Σ+ (0, 0) band of a cold sample of SiO+ has been recorded and analyzed. The branching ratios for B2Σ+ (v = 0) → X2Σ+ (v) and B2Σ+ (v = 0) → A2Πi(v) emission were determined and compared with values predicted based upon existing experimental and theoretical data. The experimentally determined branching ratios show that the B2Σ+ (v = 0) → X2Σ+ (v) transitions are somewhat less diagonal than predicted. The implications for laser cooling of a trapped sample of SiO+ using broadband laser excitation are discussed.
Original language | English (US) |
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Pages (from-to) | 26-32 |
Number of pages | 7 |
Journal | Journal of Molecular Spectroscopy |
Volume | 332 |
DOIs | |
State | Published - Feb 1 2017 |
Funding
The research at ASU has been supported by a grant from the National Science Foundation (CSDM-A; CHE-1265885)(Steimle). NSF Grant No. PHY-1404455 funded PRS and BCO for hardware and development of software used for photon counting fluorescence detection. ARO Grant No. W911NF-14-0378 funded PRS and BCO for travel and data analysis. We thank Mark Kokish for useful conversations on molecular orbital theory.
Keywords
- Branching ratios
- Cold sample SiO cation
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Spectroscopy
- Physical and Theoretical Chemistry