Electronic stopping calculated using explicit phase shift factors

J. Sillanpää, J. Peltola, K. Nordlund, J. Keinonen, M. J. Puska

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

Predicting range profiles of low-energy (0.1-10 keV/amu) ions implanted in materials is a long-standing problem of considerable theoretical and practical interest. We combine here the best available method for treating the nuclear slowing down, namely a molecular-dynamics range calculation method, with a method based on density-functional theory to calculate electronic slowing down for each ion-target atom pair separately. Calculation of range profiles of technologically important dopants in Si shows that the method is of comparable accuracy to previous methods for B, P, and As implantation of Si, and clearly more accurate for Al implantation of Si.

Original languageEnglish (US)
Article number134113
Pages (from-to)1341131-1341135
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume63
Issue number13
DOIs
StatePublished - 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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