Electronic stopping of silicon from a 3D charge distribution

J. Sillanpää*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

We present a phenomenological model for the electronic stopping at low velocities (v<v0). By using molecular dynamics and calculating the electronic stopping from a 3D charge distribution without using any free parameters, we obtain accurate range distributions on a solid physical basis. Our electronic stopping model is based on the Brandt-Kitagawa (BK) theory, in which the electronic stopping of a heavy ion is the electronic stopping of a proton scaled by the square of the effective charge. We calculate the stoppings of different ions in silicon, for which both accurate electron distributions and experimental range distributions are available. We first test the model for hydrogen ions, to determine whether a basis exists for the scaling hypothesis, and then for heavier ions. The results are compared with experimental range profiles and, except for the 〈1 1 0〉 channel, show good agreement, much better than that achieved by using standard (nonlocal) electronic stopping models and comparable to that achieved by models employing free parameters. We discuss ways to improve the agreement in channels by taking into account the size radius of heavy ions. Although our model is essentially a phenomenological one, it has a sound physical basis. It has no free parameters and can be used for all ion-target combinations.

Original languageEnglish (US)
Pages (from-to)302-309
Number of pages8
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume164
DOIs
StatePublished - Apr 2000
EventICACS-18: 18th International Conference on Atomic Collisions in Solids - Odense, Denmark
Duration: Aug 3 1999Aug 8 1999

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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