Electronic Structure and Band Gap of Fullerenes on Tungsten Surfaces: Transition from a Semiconductor to a Metal Triggered by Annealing

INIS

• annealing 100%
• molecules 80%
• interfaces 80%
• surfaces 60%
• electronic structure 60%
• metals 40%
• control 40%
• layers 40%
• spectroscopy 20%
• solids 20%
• devices 20%
• size 20%
• spatial resolution 20%
• performance 20%
• transformations 20%
• reduction 20%
• maps 20%
• semiconductor materials 20%
• nanoparticles 20%
• modulation 20%
• spectra 20%
• density functional method 20%
• transition metals 20%
• coalescence 20%
• carbides 20%
• scanning tunneling microscopy 20%
• ripening 20%
• tungsten 20%
• density of states 20%
• tunneling 20%
• fullerenes 20%

Chemistry

• Band Gap 100%
• Molecule 80%
• Electronic State 60%
• Annealing 60%
• Chemical Reaction 60%
• Electronic Property 40%
• Metal Nanoparticle 40%
• Surface 40%
• Density Functional Theory 20%
• Transition Element 20%
• Molecular Electronics 20%
• Spectroscopy 20%
• Tunneling 20%
• Reduction 20%
• Density of State 20%
• Semiconductor 20%
• Tungsten 20%
• Molecular Layer 20%
• Scanning Tunneling Microscopy 20%
• Coalescence 20%
• Nanosphere 20%
• Electronic Transition 20%
• Molecular Surface 20%
• Solid State Reaction 20%
• Chemical Transformation 20%
• Fullerene 20%
• Metal 20%
• Particle Size 20%
• Spectra 20%
• Reaction Temperature 20%

Material Science

• Metal Interface 40%
• Surface 40%
• Photovoltaics 20%
• Semiconductor Material 20%
• Electronic Device 20%
• Carbide 20%
• Coalescence 20%