Electronic structure of CsBi4Te6

P. Larson; S. D. Mahanti; D. Y. Chung; M. G. Kanatzidis

Electronic structure of CsBi₄Te₆

P. Larson^*, S. D. Mahanti, D. Y. Chung, M. G. Kanatzidis

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Conference article › peer-review

Abstract

Recently, CsBi₄Te₆ has been reported as a high-performance thermoelectric material for low temperature applications with a higher thermoelectric figure of merit (ZT ∼ 0.8 at 225 Kelvin) than conventional Bi_2-xSb_xTe_3-ySe_y alloys at the same temperature. First-principle electronic structure calculations within density functional theory performed on this material give an indirect narrow-gap semiconductor. Dispersions of energy bands along different directions in k-space display large anisotropy and multiple conduction band minima close in energy, characteristics of a good thermoelectric material.

Original language	English (US)
Journal	Proceedings - IEEE International Symposium on Circuits and Systems
Volume	4
State	Published - Jan 1 2001
Event	IEEE International Symposium on Circuits and Systems (ISCAS 2001) - Sydney, NSW, Australia Duration: May 6 2001 → May 9 2001

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "Electronic structure of CsBi4Te6",

abstract = "Recently, CsBi4Te6 has been reported as a high-performance thermoelectric material for low temperature applications with a higher thermoelectric figure of merit (ZT ∼ 0.8 at 225 Kelvin) than conventional Bi2-xSbxTe3-ySey alloys at the same temperature. First-principle electronic structure calculations within density functional theory performed on this material give an indirect narrow-gap semiconductor. Dispersions of energy bands along different directions in k-space display large anisotropy and multiple conduction band minima close in energy, characteristics of a good thermoelectric material.",

author = "P. Larson and Mahanti, {S. D.} and Chung, {D. Y.} and Kanatzidis, {M. G.}",

year = "2001",

month = jan,

day = "1",

language = "English (US)",

volume = "4",

journal = "Proceedings - IEEE International Symposium on Circuits and Systems",

issn = "0271-4310",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Symposium on Circuits and Systems (ISCAS 2001) ; Conference date: 06-05-2001 Through 09-05-2001",

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TY - JOUR

T1 - Electronic structure of CsBi4Te6

AU - Larson, P.

AU - Mahanti, S. D.

AU - Chung, D. Y.

AU - Kanatzidis, M. G.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Recently, CsBi4Te6 has been reported as a high-performance thermoelectric material for low temperature applications with a higher thermoelectric figure of merit (ZT ∼ 0.8 at 225 Kelvin) than conventional Bi2-xSbxTe3-ySey alloys at the same temperature. First-principle electronic structure calculations within density functional theory performed on this material give an indirect narrow-gap semiconductor. Dispersions of energy bands along different directions in k-space display large anisotropy and multiple conduction band minima close in energy, characteristics of a good thermoelectric material.

AB - Recently, CsBi4Te6 has been reported as a high-performance thermoelectric material for low temperature applications with a higher thermoelectric figure of merit (ZT ∼ 0.8 at 225 Kelvin) than conventional Bi2-xSbxTe3-ySey alloys at the same temperature. First-principle electronic structure calculations within density functional theory performed on this material give an indirect narrow-gap semiconductor. Dispersions of energy bands along different directions in k-space display large anisotropy and multiple conduction band minima close in energy, characteristics of a good thermoelectric material.

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M3 - Conference article

AN - SCOPUS:0035007975

SN - 0271-4310

VL - 4

JO - Proceedings - IEEE International Symposium on Circuits and Systems

JF - Proceedings - IEEE International Symposium on Circuits and Systems

T2 - IEEE International Symposium on Circuits and Systems (ISCAS 2001)

Y2 - 6 May 2001 through 9 May 2001

ER -

Electronic structure of CsBi₄Te₆

Abstract

ASJC Scopus subject areas

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