Electronic structure of CsBi4Te6: A high-performance thermoelectric at low temperatures

P. Larson; S. D. Mahanti; D. Y. Chung; M. G. Kanatzidis

Electronic structure of CsBi₄Te₆: A high-performance thermoelectric at low temperatures

P. Larson^*, S. D. Mahanti, D. Y. Chung, M. G. Kanatzidis

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

Recently, a novel narrow-gap semiconductor CsBi₄Te₆ has been discovered with greater potential for low-temperature applications than the best existing high-performance thermoelectrics, Bi₂Te₃ and its alloys. Electronic structure calculations in this bulk system display reduced dimensionality of hole transport whose origin can be traced to the presence of Bi-Bi bonds (instead of Bi-Te and Te-Te bonds), unique for bismuth chalcogenide systems. This reduced dimensionality of charge transport along with the low thermal conductivity of this compound can explain the observed large thermoelectric figure of merit ZT in hole doped CsBi₄Te₆.

Original language	English (US)
Article number	045205
Pages (from-to)	452051-452055
Number of pages	5
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	65
Issue number	4
State	Published - Jan 15 2002

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

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abstract = "Recently, a novel narrow-gap semiconductor CsBi4Te6 has been discovered with greater potential for low-temperature applications than the best existing high-performance thermoelectrics, Bi2Te3 and its alloys. Electronic structure calculations in this bulk system display reduced dimensionality of hole transport whose origin can be traced to the presence of Bi-Bi bonds (instead of Bi-Te and Te-Te bonds), unique for bismuth chalcogenide systems. This reduced dimensionality of charge transport along with the low thermal conductivity of this compound can explain the observed large thermoelectric figure of merit ZT in hole doped CsBi4Te6.",

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T2 - A high-performance thermoelectric at low temperatures

AU - Larson, P.

AU - Mahanti, S. D.

AU - Chung, D. Y.

AU - Kanatzidis, M. G.

PY - 2002/1/15

Y1 - 2002/1/15

N2 - Recently, a novel narrow-gap semiconductor CsBi4Te6 has been discovered with greater potential for low-temperature applications than the best existing high-performance thermoelectrics, Bi2Te3 and its alloys. Electronic structure calculations in this bulk system display reduced dimensionality of hole transport whose origin can be traced to the presence of Bi-Bi bonds (instead of Bi-Te and Te-Te bonds), unique for bismuth chalcogenide systems. This reduced dimensionality of charge transport along with the low thermal conductivity of this compound can explain the observed large thermoelectric figure of merit ZT in hole doped CsBi4Te6.

AB - Recently, a novel narrow-gap semiconductor CsBi4Te6 has been discovered with greater potential for low-temperature applications than the best existing high-performance thermoelectrics, Bi2Te3 and its alloys. Electronic structure calculations in this bulk system display reduced dimensionality of hole transport whose origin can be traced to the presence of Bi-Bi bonds (instead of Bi-Te and Te-Te bonds), unique for bismuth chalcogenide systems. This reduced dimensionality of charge transport along with the low thermal conductivity of this compound can explain the observed large thermoelectric figure of merit ZT in hole doped CsBi4Te6.

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ER -

Electronic structure of CsBi₄Te₆: A high-performance thermoelectric at low temperatures

Abstract

ASJC Scopus subject areas

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