Abstract
The electronic structure of a disordered alloy is described by a real-space tight-binding calculation in a configurational averaging scheme. Using appropriate starting vector for the recursion method, it is found that the new approach presented here improves substantially ( by a factor five to ten ) previous methods and allows a realistic determination of quantities for the phase diagrams computation related to the electronic structure.
Original language | English (US) |
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Pages (from-to) | 489-492 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 80 |
Issue number | 7 |
DOIs | |
State | Published - Nov 1991 |
Funding
Acknowledgments - This work was supported by the Director Office of Energy Research (Materials Science Division), U.S. Department of Energy, under Contract No. DE-AC0376SF00098. Research grants NATO, CNRS-NSF, and DRED of MEN are gratefully acknowledged.
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry