Electronic structure of TmSe

H. J.F. Jansen; A. J. Freeman; R. Monnier

doi:10.1016/0304-8853(85)90464-0

Electronic structure of TmSe

H. J.F. Jansen^*, A. J. Freeman, R. Monnier

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Total energy local density functional electronic structure calculations versus volume were performed for TmSe. Our calculated ground state properties agree very well with experiment. Self-interaction corrections for the localized 4f-electrons are small. The mixed-valent transition is related to the closing of the gap between the f-band and the conduction d-band.

Original language	English (US)
Pages (from-to)	459-461
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	47-48
Issue number	C
DOIs	https://doi.org/10.1016/0304-8853(85)90464-0
State	Published - Feb 1985

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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@article{98443cd015b042c28f4b5ad94b95e557,

title = "Electronic structure of TmSe",

abstract = "Total energy local density functional electronic structure calculations versus volume were performed for TmSe. Our calculated ground state properties agree very well with experiment. Self-interaction corrections for the localized 4f-electrons are small. The mixed-valent transition is related to the closing of the gap between the f-band and the conduction d-band.",

author = "Jansen, {H. J.F.} and Freeman, {A. J.} and R. Monnier",

note = "Funding Information: This research was supported by the US Air Force Office of Scientific Research (grant no. 81-0024). The computational work was made possible by a grant from Cray Research, Inc.",

year = "1985",

month = feb,

doi = "10.1016/0304-8853(85)90464-0",

language = "English (US)",

volume = "47-48",

pages = "459--461",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier B.V.",

number = "C",

}

TY - JOUR

T1 - Electronic structure of TmSe

AU - Jansen, H. J.F.

AU - Freeman, A. J.

AU - Monnier, R.

N1 - Funding Information: This research was supported by the US Air Force Office of Scientific Research (grant no. 81-0024). The computational work was made possible by a grant from Cray Research, Inc.

PY - 1985/2

Y1 - 1985/2

N2 - Total energy local density functional electronic structure calculations versus volume were performed for TmSe. Our calculated ground state properties agree very well with experiment. Self-interaction corrections for the localized 4f-electrons are small. The mixed-valent transition is related to the closing of the gap between the f-band and the conduction d-band.

AB - Total energy local density functional electronic structure calculations versus volume were performed for TmSe. Our calculated ground state properties agree very well with experiment. Self-interaction corrections for the localized 4f-electrons are small. The mixed-valent transition is related to the closing of the gap between the f-band and the conduction d-band.

UR - http://www.scopus.com/inward/record.url?scp=0021370301&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021370301&partnerID=8YFLogxK

U2 - 10.1016/0304-8853(85)90464-0

DO - 10.1016/0304-8853(85)90464-0

M3 - Article

AN - SCOPUS:0021370301

SN - 0304-8853

VL - 47-48

SP - 459

EP - 461

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - C

ER -

Electronic structure of TmSe

Abstract

ASJC Scopus subject areas

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