Electrostatic tuning of magnetism at the conducting (111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3 interface

V. V. Bal; Z. Huang; K. Han; Ariando; T. Venkatesan; V. Chandrasekhar

doi:10.1063/1.4986912

Electrostatic tuning of magnetism at the conducting (111) (La_0.3Sr_0.7)(Al_0.65Ta_0.35)/SrTiO₃ interface

V. V. Bal, Z. Huang, K. Han, Ariando, T. Venkatesan, V. Chandrasekhar

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We present measurements of the low temperature electrical transport properties of the two dimensional carrier gas that forms at the interface of (111) (La_0.3Sr_0.7)(Al_0.65Ta_0.35)/SrTiO₃ as a function of applied back gate voltage, V_g. As is found in (111) LaAlO₃/SrTiO₃ interfaces, the low-field Hall coefficient is electron-like but shows a sharp reduction in magnitude below V _g ∼ 20 V, indicating the presence of hole-like carriers in the system. This same value of V_g correlates approximately with the gate voltage below which the magnetoresistance evolves from nonhysteretic to hysteretic behavior at millikelvin temperatures, signaling the onset of magnetic order in the system. We believe our results can provide insight into the mechanism of magnetism in SrTiO₃ based systems.

Original language	English (US)
Article number	081604
Journal	Applied Physics Letters
Volume	111
Issue number	8
DOIs	https://doi.org/10.1063/1.4986912
State	Published - Aug 21 2017

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4986912

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@article{562aad1b9b8b4dd0a7a65d26991c2b37,

title = "Electrostatic tuning of magnetism at the conducting (111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3 interface",

abstract = "We present measurements of the low temperature electrical transport properties of the two dimensional carrier gas that forms at the interface of (111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3 as a function of applied back gate voltage, Vg. As is found in (111) LaAlO3/SrTiO3 interfaces, the low-field Hall coefficient is electron-like but shows a sharp reduction in magnitude below V g ∼ 20 V, indicating the presence of hole-like carriers in the system. This same value of Vg correlates approximately with the gate voltage below which the magnetoresistance evolves from nonhysteretic to hysteretic behavior at millikelvin temperatures, signaling the onset of magnetic order in the system. We believe our results can provide insight into the mechanism of magnetism in SrTiO3 based systems.",

author = "Bal, {V. V.} and Z. Huang and K. Han and Ariando and T. Venkatesan and V. Chandrasekhar",

note = "Funding Information: The U.S. Department of Energy, Office of Basic Energy Sciences supported the work at Northwestern University through Grant No. DE-FG02-06ER46346. Work at NUS was supported by the MOE Tier 1 (Grants Nos. R-144-000-364112 and R-144-000-346-112) and Singapore National Research Foundation (NRF) under the Competitive Research Programs (CRP Awards Nos. NRF-CRP8-2011-06, NRF-CRP10-2012-02, and NRF-CRP15-2015-01). This work utilized Northwestern University Micro/Nano Fabrication Facility (NUFAB), which is supported by the State of Illinois and Northwestern University. Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = aug,

day = "21",

doi = "10.1063/1.4986912",

language = "English (US)",

volume = "111",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - Electrostatic tuning of magnetism at the conducting (111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3 interface

AU - Bal, V. V.

AU - Huang, Z.

AU - Han, K.

AU - Ariando,

AU - Venkatesan, T.

AU - Chandrasekhar, V.

N1 - Funding Information: The U.S. Department of Energy, Office of Basic Energy Sciences supported the work at Northwestern University through Grant No. DE-FG02-06ER46346. Work at NUS was supported by the MOE Tier 1 (Grants Nos. R-144-000-364112 and R-144-000-346-112) and Singapore National Research Foundation (NRF) under the Competitive Research Programs (CRP Awards Nos. NRF-CRP8-2011-06, NRF-CRP10-2012-02, and NRF-CRP15-2015-01). This work utilized Northwestern University Micro/Nano Fabrication Facility (NUFAB), which is supported by the State of Illinois and Northwestern University. Publisher Copyright: © 2017 Author(s).

PY - 2017/8/21

Y1 - 2017/8/21

N2 - We present measurements of the low temperature electrical transport properties of the two dimensional carrier gas that forms at the interface of (111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3 as a function of applied back gate voltage, Vg. As is found in (111) LaAlO3/SrTiO3 interfaces, the low-field Hall coefficient is electron-like but shows a sharp reduction in magnitude below V g ∼ 20 V, indicating the presence of hole-like carriers in the system. This same value of Vg correlates approximately with the gate voltage below which the magnetoresistance evolves from nonhysteretic to hysteretic behavior at millikelvin temperatures, signaling the onset of magnetic order in the system. We believe our results can provide insight into the mechanism of magnetism in SrTiO3 based systems.

AB - We present measurements of the low temperature electrical transport properties of the two dimensional carrier gas that forms at the interface of (111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3 as a function of applied back gate voltage, Vg. As is found in (111) LaAlO3/SrTiO3 interfaces, the low-field Hall coefficient is electron-like but shows a sharp reduction in magnitude below V g ∼ 20 V, indicating the presence of hole-like carriers in the system. This same value of Vg correlates approximately with the gate voltage below which the magnetoresistance evolves from nonhysteretic to hysteretic behavior at millikelvin temperatures, signaling the onset of magnetic order in the system. We believe our results can provide insight into the mechanism of magnetism in SrTiO3 based systems.

UR - http://www.scopus.com/inward/record.url?scp=85028544245&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85028544245&partnerID=8YFLogxK

U2 - 10.1063/1.4986912

DO - 10.1063/1.4986912

M3 - Article

AN - SCOPUS:85028544245

SN - 0003-6951

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 081604

ER -

Electrostatic tuning of magnetism at the conducting (111) (La_0.3Sr_0.7)(Al_0.65Ta_0.35)/SrTiO₃ interface

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