Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides

Deep Jariwala, Vinod K. Sangwan, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

2287 Scopus citations


With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Toward that end, several classes of high-performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.

Original languageEnglish (US)
Pages (from-to)1102-1120
Number of pages19
JournalACS nano
Issue number2
StatePublished - Feb 25 2014


  • digital electronics
  • field-effect transistor
  • flexible electronics
  • light-emitting diode
  • molybdenum disulfide
  • nanoelectronics
  • optoelectronics
  • photodetector
  • photovoltaic
  • sensor
  • solar cell
  • valleytronics
  • van der Waals heterostructure

ASJC Scopus subject areas

  • General Engineering
  • General Materials Science
  • General Physics and Astronomy


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