Emerging memory devices

Kosmas Galatsis*, Kang Wang, Youssry Botros, Yang Yang, Ya Hong Xie, J. F. Stoddart, R. B. Kaner, Cengiz Ozkan, Jianlin Liu, Mihri Ozkan, Chongwu Zhou, Ki Wook Kim

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

To merge the unprecedented opportunity of nanotechnology with the industry's imminent scaling and power dissipation challenges, the Center on Functional Engineered Nano Architectonics (FENA) aims to engineer nontraditional memory alternatives based on nanomaterials and structures that may go beyond existing CMOS memory devices. FENA's new memory devices include molecular memory, spin-based memory, novel floating memory and phase change memory. Each device has its unique range of advantages and challenges. Although all are proved effective, none can compete with either DRAM or FLASH memory devices.

Original languageEnglish (US)
Pages (from-to)12-21
Number of pages10
JournalIEEE Circuits and Devices Magazine
Volume22
Issue number3
DOIs
StatePublished - May 2006

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Electrical and Electronic Engineering

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