Emerging memory devices

Kosmas Galatsis; Kang Wang; Youssry Botros; Yang Yang; Ya Hong Xie; J. F. Stoddart; R. B. Kaner; Cengiz Ozkan; Jianlin Liu; Mihri Ozkan; Chongwu Zhou; Ki Wook Kim

doi:10.1109/MCD.2006.1657845

Emerging memory devices

Kosmas Galatsis^*, Kang Wang, Youssry Botros, Yang Yang, Ya Hong Xie, J. F. Stoddart, R. B. Kaner, Cengiz Ozkan, Jianlin Liu, Mihri Ozkan, Chongwu Zhou, Ki Wook Kim

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

To merge the unprecedented opportunity of nanotechnology with the industry's imminent scaling and power dissipation challenges, the Center on Functional Engineered Nano Architectonics (FENA) aims to engineer nontraditional memory alternatives based on nanomaterials and structures that may go beyond existing CMOS memory devices. FENA's new memory devices include molecular memory, spin-based memory, novel floating memory and phase change memory. Each device has its unique range of advantages and challenges. Although all are proved effective, none can compete with either DRAM or FLASH memory devices.

Original language	English (US)
Pages (from-to)	12-21
Number of pages	10
Journal	IEEE Circuits and Devices Magazine
Volume	22
Issue number	3
DOIs	https://doi.org/10.1109/MCD.2006.1657845
State	Published - May 2006

Funding

This work has been supported by the Focus Center Research Program managed by the Microelectonics Advanced Research Corporation—Center on Functional Engineered Nano Architectonics and funded by the parent companies of the Semiconductor Industry Association (SIA), Semiconductor Equipment and Materials International (SEMI), the U.S. Department of Defense, and DARPA. Furthermore, we would like to acknowledge proofreading by Dr. Victor Zhirnov (SRC) and the participation and contributions of the graduate students and researchers associated with the aforementioned research projects.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Electrical and Electronic Engineering

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title = "Emerging memory devices",

abstract = "To merge the unprecedented opportunity of nanotechnology with the industry's imminent scaling and power dissipation challenges, the Center on Functional Engineered Nano Architectonics (FENA) aims to engineer nontraditional memory alternatives based on nanomaterials and structures that may go beyond existing CMOS memory devices. FENA's new memory devices include molecular memory, spin-based memory, novel floating memory and phase change memory. Each device has its unique range of advantages and challenges. Although all are proved effective, none can compete with either DRAM or FLASH memory devices.",

author = "Kosmas Galatsis and Kang Wang and Youssry Botros and Yang Yang and Xie, {Ya Hong} and Stoddart, {J. F.} and Kaner, {R. B.} and Cengiz Ozkan and Jianlin Liu and Mihri Ozkan and Chongwu Zhou and Kim, {Ki Wook}",

note = "Funding Information: This work has been supported by the Focus Center Research Program managed by the Microelectonics Advanced Research Corporation—Center on Functional Engineered Nano Architectonics and funded by the parent companies of the Semiconductor Industry Association (SIA), Semiconductor Equipment and Materials International (SEMI), the U.S. Department of Defense, and DARPA. Furthermore, we would like to acknowledge proofreading by Dr. Victor Zhirnov (SRC) and the participation and contributions of the graduate students and researchers associated with the aforementioned research projects.",

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doi = "10.1109/MCD.2006.1657845",

language = "English (US)",

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AU - Galatsis, Kosmas

AU - Wang, Kang

AU - Botros, Youssry

AU - Yang, Yang

AU - Xie, Ya Hong

AU - Stoddart, J. F.

AU - Kaner, R. B.

AU - Ozkan, Cengiz

AU - Liu, Jianlin

AU - Ozkan, Mihri

AU - Zhou, Chongwu

AU - Kim, Ki Wook

N1 - Funding Information: This work has been supported by the Focus Center Research Program managed by the Microelectonics Advanced Research Corporation—Center on Functional Engineered Nano Architectonics and funded by the parent companies of the Semiconductor Industry Association (SIA), Semiconductor Equipment and Materials International (SEMI), the U.S. Department of Defense, and DARPA. Furthermore, we would like to acknowledge proofreading by Dr. Victor Zhirnov (SRC) and the participation and contributions of the graduate students and researchers associated with the aforementioned research projects.

PY - 2006/5

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AB - To merge the unprecedented opportunity of nanotechnology with the industry's imminent scaling and power dissipation challenges, the Center on Functional Engineered Nano Architectonics (FENA) aims to engineer nontraditional memory alternatives based on nanomaterials and structures that may go beyond existing CMOS memory devices. FENA's new memory devices include molecular memory, spin-based memory, novel floating memory and phase change memory. Each device has its unique range of advantages and challenges. Although all are proved effective, none can compete with either DRAM or FLASH memory devices.

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Emerging memory devices

Abstract

Funding

ASJC Scopus subject areas

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