Emerging Opportunities for Electrostatic Control in Atomically Thin Devices

Megan E. Beck, Mark C. Hersam*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

44 Scopus citations


Electrostatic control of charge carrier concentration underlies the field-effect transistor (FET), which is among the most ubiquitous devices in the modern world. As transistors and related electronic devices have been miniaturized to the nanometer scale, electrostatics have become increasingly important, leading to progressively sophisticated device geometries such as the finFET. With the advent of atomically thin materials in which dielectric screening lengths are greater than device physical dimensions, qualitatively different opportunities emerge for electrostatic control. In this Review, recent demonstrations of unconventional electrostatic modulation in atomically thin materials and devices are discussed. By combining low dielectric screening with the other characteristics of atomically thin materials such as relaxed requirements for lattice matching, quantum confinement of charge carriers, and mechanical flexibility, high degrees of electrostatic spatial inhomogeneity can be achieved, which enables a diverse range of gate-tunable properties that are useful in logic, memory, neuromorphic, and optoelectronic technologies.

Original languageEnglish (US)
Pages (from-to)6498-6518
Number of pages21
JournalACS nano
Issue number6
StatePublished - Jun 23 2020


  • anti-ambipolar
  • charge transport
  • electrostatics
  • neuromorphic
  • nonvolatile memory
  • photodiodes
  • transistors
  • two-dimensional materials
  • van der Waals heterojunctions

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)


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